Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
500V |
|
3.1V |
13A |
|
|
660mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
500V |
|
3.1V |
13A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
500V |
|
3.1V |
13A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS (drain-source voltage): ** 500V
The maximum drain-source voltage is 500V, which enables CEP730G-VB to handle high voltage applications and is suitable for power switches and control circuits that require high withstand voltage.
- **VGS (gate-source voltage): ** ±30V
The maximum gate-source voltage of the MOSFET is ±30V, ensuring good stability and safety during operation.
- **Vth (threshold voltage): ** 3.1V
The MOSFET starts to turn on when the gate-source voltage reaches 3.1V, which is suitable for applications with medium and high threshold voltage requirements.
- **RDS(ON) (drain-source on-resistance): **
- 660mΩ @ VGS=10V
Despite the relatively high on-resistance, it still provides reasonable performance under the high withstand voltage condition of 500V, ensuring stable switching behavior and power management.
- **ID (continuous leakage current): ** 13A
Capable of handling up to 13A continuous current, suitable for high-power power switches and control systems, ensuring system reliability and performance.
Domain and module applications：
Application Examples
The high withstand voltage and good current handling capability of CEP730G-VB MOSFET make it excel in multiple high voltage and high power application fields. The following are some typical application fields:
1. **Power Switch:**
- In power switching systems, CEP730G-VB is able to handle voltages up to 500V, suitable for switching and controlling high voltage power supplies, such as power converters and high-power motor drive circuits, ensuring stable and efficient power switching operations.
2. **High Voltage Power Supply:**
- In high voltage power supply applications, the high withstand voltage and high current handling capability of this MOSFET make it suitable for high voltage power modules and high voltage DC-DC converters, providing stable power conversion and management functions.
3. **Industrial Power Supply:**
- In industrial power supply systems, the high voltage tolerance and moderate on-resistance of CEP730G-VB make it suitable for power switching and control of industrial equipment, ensuring stable operation and high efficiency of the equipment.
4. **Motor drive:**
- In motor drive systems, CEP730G-VB can handle high voltage and high current, suitable for switching and controlling high-power motors, improving system efficiency and reliability, and ensuring stable operation of motors.
5. **Inverter:**
- In inverters, CEP730G-VB's high withstand voltage characteristics and current handling capabilities make it suitable for high-voltage inverter circuits, providing efficient power switching and control functions, and optimizing inverter performance and stability.
With its high withstand voltage and stable performance, CEP730G-VB MOSFET is an ideal choice for high-voltage and high-power applications, providing reliable and efficient solutions for various high-power power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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