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CEP6042-VB Product details

Product introduction:

1. CEP6042-VB MOSFET Product Introduction



CEP6042-VB is a high-performance N-channel MOSFET packaged in TO220, designed for high-current, high-efficiency applications. It uses Trench technology to provide extremely low on-resistance and high current carrying capacity, making it excellent in demanding power management and power control fields. Its maximum drain-source voltage (VDS) is 60V, the maximum gate-source voltage (VGS) is ±20V, and the gate threshold voltage (Vth) is 3V. At VGS=10V, the on-resistance (RDS(ON)) is 3mΩ and the drain current (ID) can reach a maximum of 210A. This MOSFET is particularly suitable for applications such as high-current switching, power management and power conversion, and can provide stable performance under high load conditions.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 60V 3V 210A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 60V 3V 210A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 60V 3V 210A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. Detailed parameter description of CEP6042-VB MOSFET



- **Model**: CEP6042-VB

- **Package**: TO220

- **Configuration**: Single N-channel

- **Maximum drain-source voltage (VDS)**: 60V

- **Maximum gate-source voltage (VGS)**: ±20V

- **Gate threshold voltage (Vth)**: 3V

- **On-resistance (RDS(ON))**:

- 3mΩ @ VGS = 10V

- 9mΩ @ VGS = 4.5V

- **Maximum drain current (ID)**: 210A

- **Technology**: Trench

- **Operating temperature range**: -55°C to +150°C

- **Thermal resistance (junction to ambient)**: 0.6°C/W

- **Drain-Source Breakdown Voltage (BVDSS)**: 60V

- **Gate-Drain Charge (Qgd)**: 150nC

- **Switching Speed**: High Speed



Domain and module applications:

III. Application fields and module examples of CEP6042-VB MOSFET



1. **High current switching**: CEP6042-VB is widely used in high current switching applications such as power management circuits, high power load control and current protection circuits due to its drain current capability of up to 210A. Its low on-resistance ensures efficient and stable operation under high current conditions.



2. **Power management**: In power management systems, CEP6042-VB provides efficient power control and protection as a switching element. It is particularly suitable for use in power conditioning modules, power protection circuits and power management systems to ensure system stability and efficient operation.



3. **Power conversion**: In power conversion applications, such as DC-DC converters and AC-DC power supplies, CEP6042-VB is able to provide efficient power conversion. Its ultra-low on-resistance and high current handling capability help improve energy conversion efficiency and reduce energy losses.



4. **Motor Drive**: CEP6042-VB is suitable for motor drive systems such as power tools, electric vehicles and industrial motor drive systems. Its high current capability and low on-resistance enable it to effectively control motors and provide stable performance.



5. **Inverter and Frequency Converter**: In inverter and frequency converter applications, CEP6042-VB is capable of handling high current loads and is suitable for solar inverters and industrial frequency converters. Its high current handling capability and low on-resistance ensure stable switching performance and efficient power conversion under high load conditions.



With its high current handling capability, extremely low on-resistance and high-speed switching characteristics, CEP6042-VB MOSFET is suitable for use in high current switching, power management, power conversion, motor drive, inverters and frequency converters, providing reliable performance and efficient operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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