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CEP20N06_10-VB Product details

Product introduction:

1. CEP20N06_10-VB Product Introduction



CEP20N06_10-VB is a high-performance N-channel MOSFET in TO220 package, designed for high current and medium-to-high voltage applications. Its maximum drain-source voltage (VDS) is 60V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is 1.7V. This MOSFET uses Trench technology and has extremely low on-resistance (RDS(ON)) and high current handling capability. CEP20N06_10-VB is suitable for various power applications that require high switching efficiency and low power consumption.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 60V 1.7V 50A 24mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 60V 1.7V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 60V 1.7V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. Detailed parameter description of CEP20N06_10-VB



| Parameters | Specifications |

|-----------------|---------------------------|

| Package type | TO220 |

| Configuration | Single N-channel |

| Drain-source voltage (VDS) | 60V |

| Gate-source voltage (VGS) | ±20V |

| Threshold voltage (Vth) | 1.7V |

| On-resistance (RDS(ON)) | 28mΩ @ VGS=4.5V |

| On-resistance (RDS(ON)) | 24mΩ @ VGS=10V |

| Continuous drain current (ID) | 50A |

| Technology | Trench |



Domain and module applications:

III. Application fields and module examples



1. **Power switch**: CEP20N06_10-VB is suitable for power switch applications, especially in power management systems in the medium voltage range (60V). Its low on-resistance (24mΩ@VGS=10V) and high current handling capability (50A) ensure efficient current control and low power consumption, and is widely used in power converters and switching power modules.



2. **DC-DC converter**: In DC-DC converters, CEP20N06_10-VB can provide efficient energy conversion as a switching element. Its low RDS(ON) characteristics reduce power loss and improve the overall efficiency of the converter, making it suitable for DC-DC converter designs of various voltage levels.



3. **Motor drive**: CEP20N06_10-VB can handle currents up to 50A, making it ideal for motor drive systems. Its high current handling capability and low on-resistance enable it to effectively control the drive current of the motor, and is suitable for use in motor control and drive modules.



4. **Power management system**: In the power management system, CEP20N06_10-VB provides stable current switching capability. Its high current capability and low on-resistance make it excellent in current distribution and power protection circuits, and suitable for various applications requiring high-efficiency power management.



5. **Load switch**: This MOSFET is also suitable for load switching applications, especially in scenarios where larger currents need to be handled. Its high current handling capability (50A) and low on-resistance (24mΩ) enable it to stably control load switching, ensuring system reliability and efficiency.



With its excellent electrical performance and high current handling capability, CEP20N06_10-VB provides an ideal solution for efficient power management and high current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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