Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
|
3120mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS (drain-source voltage): ** 650V
This is the maximum voltage that the MOSFET can withstand between the drain and the source, suitable for high-voltage application scenarios.
- **VGS (gate-source voltage): ** ±30V
Indicates the maximum allowable voltage from gate to source, ensuring that the MOSFET is not damaged during operation.
- **Vth (threshold voltage): ** 3.5V
This is the gate-source voltage at which the MOSFET starts to turn on, ensuring that it starts at a higher gate voltage.
- **RDS(ON) (drain-source on-resistance): **
- 3900mΩ @ VGS=4.5V
- 3120mΩ @ VGS=10V
These values represent the on-resistance at different gate-source voltages. A higher RDS(ON) value means that the MOSFET is suitable for low-current, high-voltage application scenarios.
- **ID (continuous drain current): ** 2A
Indicates the maximum continuous current that the MOSFET can handle, ensuring stability in low current and high voltage environments.
Domain and module applications：
Application Examples
The high voltage and high withstand voltage characteristics of CEP02N6G-VB MOSFET make it widely used in many fields and modules. The following are some typical usage scenarios:
1. **Power switch:**
- In power switch applications, CEP02N6G-VB can handle the switching control of high voltage power supplies. Its high breakdown voltage ensures safety and reliability in high voltage environments, suitable for switching power supplies, UPS and high voltage power management systems.
2. **High voltage converter:**
- In high voltage converters, this MOSFET is used as the main switching element to achieve efficient voltage conversion. Its high RDS(ON) value is suitable for low-frequency high voltage conversion applications such as industrial power conversion and high voltage DC-DC converters.
3. **Industrial control:**
- CEP02N6G-VB can handle high voltage control tasks in industrial control systems. Its high withstand voltage capability and reliability make it suitable for industrial automation equipment, motor drives and high voltage control modules.
4. **Lighting system:**
- In high-voltage lighting systems, this MOSFET can control the switching and dimming of high-voltage lamps. It is suitable for street lighting, high-voltage LED drivers and other high-voltage lighting control systems, ensuring the efficiency and stability of the system.
5. **Induction cooker:**
- CEP02N6G-VB is suitable for the high-voltage control part of the induction cooker. Its high breakdown voltage and high withstand voltage ensure the safe operation of the induction cooker under high power and high voltage conditions.
With its high breakdown voltage, high on-resistance and high reliability, CEP02N6G-VB MOSFET provides reliable support for various high-voltage power management and control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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