Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
|
4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS (drain-source voltage): ** 30V
This is the maximum voltage that the MOSFET can withstand between the drain and the source, and is suitable for medium voltage applications.
- **VGS (gate-source voltage): ** ±20V
Indicates the maximum allowable voltage from the gate to the source, ensuring that the MOSFET will not be damaged during operation.
- **Vth (threshold voltage): ** 1.7V
This is the gate-source voltage at which the MOSFET starts to turn on. A lower threshold voltage helps the MOSFET start at a lower gate voltage and improve switching efficiency.
- **RDS(ON) (drain-source on-resistance): **
- 5mΩ @ VGS=4.5V
- 4mΩ @ VGS=10V
These values represent the on-resistance of the MOSFET at different gate-source voltages. A lower RDS(ON) value can reduce power consumption and improve switching efficiency.
- **ID (Continuous Drain Current): ** 18A
Indicates the maximum continuous current that the MOSFET can handle, ensuring stability and reliability under high current loads.
Domain and module applications：
Application Examples
The high current handling capability and low on-resistance of CEM8809-VB MOSFET make it widely used in multiple fields and modules. Here are some typical usage scenarios:
1. **Motor Driver:**
- In motor drive applications, CEM8809-VB is able to handle currents up to 18A, making it ideal for motor control circuits. Its low RDS(ON) value ensures efficient operation and stability of the motor drive, making it suitable for power tools, fans and other motor drive devices.
2. **DC-DC Converter:**
- In a DC-DC converter, this MOSFET provides efficient voltage conversion as a switching element. Its low on-resistance and high current carrying capacity improve the efficiency of the converter, making it suitable for high power conversion applications such as computer power supplies and power modules.
3. **Power Switch: **
- CEM8809-VB can be used for power switch applications. Its extremely low RDS(ON) value and high current handling capability ensure efficient switching control. It is suitable for various power management modules to reduce power consumption and improve system efficiency.
4. **LED Driver: **
- In LED driver applications, this MOSFET can efficiently control the switching of LEDs. Its low on-resistance improves the efficiency of LED drivers and is suitable for lighting systems and display screen controls to provide stable light source output.
5. **Power Management System: **
- CEM8809-VB is used as a switching element in power management systems to achieve efficient switching control. Its high current carrying capacity and low on-resistance make it an ideal choice for power management and power distribution systems.
CEM8809-VB MOSFET provides strong support for various power management and switching applications with its high current handling capability, low on-resistance and Trench technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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