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BVSS84LT1G-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**BVSS84LT1G-VB** is a high-performance N-channel MOSFET that uses trench technology and is packaged in a compact SOT23-3 package. This MOSFET is designed for low-power and medium-voltage applications, with a drain-source voltage capability of 60V and a drain current capability of 0.3A. Its low threshold voltage and high on-resistance make it suitable for use in applications that require high switching efficiency and stability, such as portable devices and small electronic circuits.
**BVSS84LT1G-VB** is a high-performance N-channel MOSFET that uses trench technology and is packaged in a compact SOT23-3 package. This MOSFET is designed for low-power and medium-voltage applications, with a drain-source voltage capability of 60V and a drain current capability of 0.3A. Its low threshold voltage and high on-resistance make it suitable for use in applications that require high switching efficiency and stability, such as portable devices and small electronic circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
II. Detailed parameter description
- **Model**: BVSS84LT1G-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench
- **Model**: BVSS84LT1G-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications：
III. Applicable fields and modules
**BVSS84LT1G-VB**’s characteristics enable it to excel in the following fields and modules:
1. **Low-power switching applications**: In portable electronic devices such as smartphones, tablets, and portable audio systems, this MOSFET can be used as a low-power switch to control the power or signal path of the device and provide reliable switching performance.
2. **Signal conditioning**: In small signal conditioning circuits such as sensor signal amplifiers and filters, the low threshold voltage and low on-resistance of this MOSFET make it suitable for precise signal conditioning and processing.
3. **Low-current power management**: In low-current power management applications such as battery-driven devices and low-power power modules, the BVSS84LT1G-VB can efficiently control current and extend battery life.
4. **Small load drive**: In circuits driving small loads, such as LED lighting and small relays, this MOSFET can provide sufficient current drive capability while maintaining efficient switching performance.
5. **Switch control circuit**: In switch control circuits, such as digital circuits and microcontroller interfaces, the compact package and good electrical characteristics of this MOSFET make it an ideal choice for controlling signal paths and implementing switching functions.
**BVSS84LT1G-VB**'s high voltage tolerance and excellent switching characteristics make it an excellent choice for low-power and medium-voltage applications, and is widely used in portable devices, signal conditioning, power management, and small load driving.
**BVSS84LT1G-VB**’s characteristics enable it to excel in the following fields and modules:
1. **Low-power switching applications**: In portable electronic devices such as smartphones, tablets, and portable audio systems, this MOSFET can be used as a low-power switch to control the power or signal path of the device and provide reliable switching performance.
2. **Signal conditioning**: In small signal conditioning circuits such as sensor signal amplifiers and filters, the low threshold voltage and low on-resistance of this MOSFET make it suitable for precise signal conditioning and processing.
3. **Low-current power management**: In low-current power management applications such as battery-driven devices and low-power power modules, the BVSS84LT1G-VB can efficiently control current and extend battery life.
4. **Small load drive**: In circuits driving small loads, such as LED lighting and small relays, this MOSFET can provide sufficient current drive capability while maintaining efficient switching performance.
5. **Switch control circuit**: In switch control circuits, such as digital circuits and microcontroller interfaces, the compact package and good electrical characteristics of this MOSFET make it an ideal choice for controlling signal paths and implementing switching functions.
**BVSS84LT1G-VB**'s high voltage tolerance and excellent switching characteristics make it an excellent choice for low-power and medium-voltage applications, and is widely used in portable devices, signal conditioning, power management, and small load driving.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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