Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Drain-Source Voltage (V_DS):** 30V
- This is the maximum voltage between the drain and source that the MOSFET can withstand.
- **Gate-Source Voltage (V_GS):** ±20V
- The maximum voltage allowed to be applied between the gate and source of the MOSFET.
- **Threshold Voltage (V_th):** 1.7V
- The minimum gate-source voltage required for the MOSFET to start conducting.
- **On-Resistance (R_DS(on)):** 4mΩ @ V_GS = 4.5V
- The resistance between the drain and source of the MOSFET in the on state when the gate-source voltage is 4.5V.
- **On-resistance (R_DS(on)):** 3mΩ @ V_GS = 10V
- The resistance between the drain and source of the MOSFET in the on state when the gate-source voltage is 10V.
- **Maximum continuous drain current (I_D):** 120A
- The maximum continuous current that the drain terminal of the MOSFET can handle under proper heat dissipation conditions.
- **Package type:** TO220
- The physical package of the MOSFET that provides good heat dissipation and mechanical strength.
- **Configuration:** Unipolar N-channel
- Indicates that the MOSFET has a single N-channel for current conduction.
- **Technology:** Trench
- Indicates that the MOSFET adopts Trench technology, which has low conduction losses and efficient switching performance.
Domain and module applications：
Application Examples
**1. Power Management Systems: **
- BUK9507-30B-VB MOSFETs are commonly used as switching components in power management systems, such as DC-DC converters and power conditioning modules. Their low on-resistance and high current handling capabilities enable them to excel in power conversion and distribution, effectively improving the overall efficiency and stability of the system.
**2. Electric Vehicle Control Systems: **
- In the drive systems of electric vehicles, this MOSFET can be used as a switching element for motor drive and battery management. Its high current carrying capacity and low on-resistance make it suitable for high-power motor control and battery protection in electric vehicles, improving the performance and endurance of the vehicle.
**3. Industrial Automation: **
- BUK9507-30B-VB applications in industrial automation equipment include load switching and motor drive control. Due to its efficient switching and low conduction loss, it can effectively control high-power industrial equipment and improve the operating efficiency and reliability of the equipment.
**4. Computer power system:**
- In computer power systems, this MOSFET can be used as an efficient power switch. Its excellent electrical characteristics and low on-resistance can ensure the stability and efficiency of the computer power supply and ensure the reliable operation of the computer system.
**5. Solar inverter:**
- In solar inverters, BUK9507-30B-VB MOSFET is often used as an efficient switching component. Its low on-resistance and high current handling capability help improve the efficiency of the inverter and optimize the overall performance of the solar system.
BUK9507-30B-VB MOSFET is widely used in various high-power electronic designs with its excellent electrical performance and high current handling capability. It is an ideal choice for efficient power management and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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