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BUK653R7-30C-VB Product details

Product introduction:

BUK653R7-30C-VB Product Introduction

BUK653R7-30C-VB is a high-performance single N-channel MOSFET in a TO220 package suitable for high current and low resistance applications. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, this MOSFET utilizes advanced trench technology to provide extremely low on-resistance and superior current handling capability. The on-resistance is 4mΩ at a VGS of 4.5V, 3mΩ at a VGS of 10V, and the maximum drain current (ID) is 120A. The BUK653R7-30C-VB excels in applications that require high current and low power consumption, and is suitable for a variety of efficient power management and motor drive applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 30V 1.7V 120A 4(mΩ) 3(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
BUK653R7-30C-VB Detailed parameter description

| Parameter| Value| Unit|
|------------------|-------------------|------|
| Package type| TO220 | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 30 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Threshold voltage (Vth) | 1.7 | V |
| On-resistance (RDS(ON)) | 4 (VGS=4.5V) | mΩ |
| On-resistance (RDS(ON)) | 3 (VGS=10V) | mΩ |
| Maximum drain current (ID) | 120 | A |
| Technology| Trench | |

Domain and module applications:

BUK653R7-30C-VB Application Fields and Modules

1. **High-Efficiency Power Switching**:
BUK653R7-30C-VB excels in high-efficiency power switching applications, especially where low on-resistance and high current handling are required. Its drain current capability of up to 120A and extremely low on-resistance help improve the efficiency of the power system and reduce power losses.

2. **Motor Drives**:
In motor drive applications, this MOSFET is capable of handling high current loads and is suitable for driving DC motors and brushless motors (BLDC). Its high current capability and low on-resistance ensure smooth operation and efficient control of the motor.

3. **DC-DC Converters**:
BUK653R7-30C-VB can be used in DC-DC converters, especially in applications that require high current and efficient conversion. Its low on-resistance improves converter efficiency, reduces power losses, and enhances overall system performance.

4. **Battery Management Systems**:
In battery management systems, this MOSFET is able to effectively control high current loads and is suitable for protection circuits and load switches. Its high current handling capability and low on-resistance help improve battery life and system stability.

5. **Solar Inverters**:
BUK653R7-30C-VB can be used for high current switching and control circuits in solar inverters. Its high current capability and low on-resistance enable it to handle the high power requirements in solar inverters and improve energy conversion efficiency.

With its high current handling capability and extremely low on-resistance, BUK653R7-30C-VB is suitable for a variety of electronic applications that require efficient and stable performance, providing a reliable solution for power management, motor drive, and high-efficiency switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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