Product introduction：
1. BUK6510-75C-VB Product Introduction
BUK6510-75C-VB is a high-performance single N-channel MOSFET produced by NXP Semiconductors, packaged in TO-220. This MOSFET is designed based on advanced Trench technology and has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V. At a gate-source voltage of 4.5V, the on-resistance is 9mΩ, which is further reduced to 7mΩ at a gate-source voltage of 10V. The BUK6510-75C-VB has a continuous drain current (ID) of up to 100A, which enables it to perform well in high-current and low conduction loss applications, and is very suitable for high-efficiency switching, power conversion and power management systems.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
9(mΩ) |
7(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
II. BUK6510-75C-VB Detailed Parameter Description
| Parameter| Value| Unit|
|------------------------|--------------------------|--------|
| Product Model| BUK6510-75C-VB | |
| Package| TO-220 | |
| Configuration| Single N-channel| |
| Drain-Source Voltage (VDS) | 80 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Threshold Voltage (Vth) | 3 | V |
| On-Resistance (RDS(ON)) | 9 (VGS = 4.5V) | mΩ |
| | 7 (VGS = 10V) | mΩ |
| Gate Current (IG) | 100 | nA |
| Continuous Drain Current (ID) | 100 | A |
| Transient pulse drain current (ID(pulse)) | 200 | A |
| Maximum power dissipation (Ptot) | 125 | W |
| Operating temperature range | -55 to +175 | °C |
| Storage temperature range | -55 to +175 | °C |
| Technology | Trench | |
Domain and module applications：
III. Application fields and module examples
The high current handling capability and low on-resistance of BUK6510-75C-VB give it significant advantages in many fields. Here are some specific application examples:
1. **High power power management**: In switch mode power supplies (SMPS) and DC-DC converters, BUK6510-75C-VB can be used as an efficient switching element to reduce on-resistance, improve power conversion efficiency, and reduce energy loss.
2. **Industrial motor control**: Due to its high current carrying capacity, this MOSFET is suitable for electric vehicles, power tools and industrial motor drive systems, and can achieve efficient motor control and precise speed regulation.
3. **Power conversion applications**: In high power inverters and power converters, BUK6510-75C-VB can handle large current loads, ensure system stability and reliability, and is widely used in solar inverters and uninterruptible power supplies (UPS).
4. **Battery Management System**: In a battery management system (BMS), this MOSFET can be used to handle high current loads, provide overcurrent protection and battery switching functions, and improve system safety and performance.
These application examples demonstrate the key role of the BUK6510-75C-VB in scenarios that require high current handling, low conduction losses, and efficient switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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