Product introduction：
1. BUK555-50B-VB Product Introduction
BUK555-50B-VB is a high-performance single N-channel MOSFET provided by NXP Semiconductors, packaged in TO-220. This MOSFET adopts advanced Trench technology, has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and provides extremely low on-resistance. Specifically, at a gate-source voltage of 4.5V, its on-resistance is 28mΩ, and drops to 24mΩ at a gate-source voltage of 10V. This MOSFET supports a maximum continuous drain current (ID) of 50A and is designed for high-efficiency switching and power management applications, meeting the needs of high current and low conduction losses.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
50A |
|
28(mΩ) |
24(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
50A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
50A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
II. BUK555-50B-VB Detailed Parameter Description
| Parameter | Value | Unit |
|------------------------|--------------------------|--------|
| Product Model | BUK555-50B-VB | |
| Package | TO-220 | |
| Configuration | Single N-channel | |
| Drain-Source Voltage (VDS) | 60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Threshold Voltage (Vth) | 1.7 | V |
| On-Resistance (RDS(ON)) | 28 (VGS = 4.5V) | mΩ |
| | 24 (VGS = 10V) | mΩ |
| Gate Current (IG) | 100 | nA |
| Continuous Drain Current (ID) | 50 | A |
| Transient pulse drain current (ID(pulse)) | 150 | A |
| Maximum power dissipation (Ptot) | 125 | W |
| Operating temperature range | -55 to +175 | °C |
| Storage temperature range | -55 to +175 | °C |
| Technology | Trench | |
Domain and module applications：
III. Application fields and module examples
The high current carrying capacity and low on-resistance of BUK555-50B-VB MOSFET make it widely used in many fields. Here are some application examples:
1. **Power management**: This MOSFET can be used in the switching link of switching power supply (SMPS) and DC-DC converter. Due to its low on-resistance and high current capability, it can effectively reduce power loss and improve conversion efficiency.
2. **Motor control**: In the motor drive system of electric vehicles, household appliances and industrial equipment, BUK555-50B-VB can be used as a high current switch to provide efficient and reliable motor control.
3. **Battery protection circuit**: In the battery management system (BMS), BUK555-50B-VB can be used for overcurrent protection and battery switch control to ensure the safety and stability of the system.
4. **Automotive Electronics**: This MOSFET can be used in automotive electronic devices such as electric power steering systems and on-board chargers to handle high current loads and provide a stable power supply.
These application examples show the important role of BUK555-50B-VB in scenarios that require high current and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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