BSZ110N06NS3 G-VB is a high-performance single N-channel MOSFET in DFN8 (3X3) package. This product has low on-resistance and high current handling capability, suitable for a variety of power management and switching applications. Its advanced Trench technology enables it to excel in both performance and efficiency, and can provide stable operating performance under high load conditions.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 60V | 2.5V | 45A | 15(mΩ) | 12(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 60V | 2.5V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 60V | 2.5V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N |
BSZ110N06NS3 G-VB Detailed parameter description
| Parameter| Value|
|---|---|
| Package| DFN8(3X3) |
| Configuration| Single N-channel|
| VDS (drain-source voltage) | 60V |
| VGS (gate-source voltage) | 20 (±V) |
| Vth (threshold voltage) | 2.5V |
| RDS(ON) @ VGS=4.5V | 15mΩ |
| RDS(ON) @ VGS=10V | 12mΩ |
| ID (drain current) | 45A |
| Technology| Trench |
Application fields and module examples
1. **Power management module**:
BSZ110N06NS3 G-VB performs well in power management, especially for DC-DC converters and power distribution units. These applications require efficient switching characteristics and low on-resistance to ensure that power loss is minimized and the overall efficiency of the system is improved.
2. **Electric vehicles and hybrid systems**:
In the battery management system of electric vehicles and hybrid vehicles, this MOSFET can be used to drive and control high current loads, ensure stable battery charge and discharge management and motor control.
3. **Industrial automation**:
Motor drive and control modules in industrial automation systems require reliable and efficient MOSFETs to handle high currents and high voltages. BSZ110N06NS3 G-VB is able to provide efficient power conversion and precise control.
4. **Consumer Electronics**:
In the charging and battery protection circuits of consumer electronics such as laptops, tablets and smartphones, this MOSFET can provide low-power and high-efficiency power management solutions to extend the battery life of the device.
5. **Communication Equipment**:
RF power amplifiers and switching power supplies in communication equipment require high-efficiency and low-on-resistance MOSFETs to ensure stable signal transmission and reliable operation of the equipment. BSZ110N06NS3 G-VB is an ideal choice for such applications.
Through its diverse application areas and excellent performance parameters, BSZ110N06NS3 G-VB can play a key role in various power and electronic equipment, improving the efficiency and reliability of the overall system.
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