Product introduction：
1. BSZ100N03LS G-VB Product Introduction
BSZ100N03LS G-VB is a single N-channel MOSFET using advanced trench technology, package type DFN8 (3x3). The device has excellent on-resistance and low gate charge, suitable for applications requiring high efficiency and high switching speed. Its maximum drain-source voltage is 30V, the gate-source voltage is ±20V, the on-resistance is 19mΩ (VGS=4.5V) and 13mΩ (VGS=10V) at different gate drive voltages, and the maximum continuous drain current is 30A. It is suitable for DC-DC converters, power management, load switches and motor drives.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
19(mΩ) |
13(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
II. BSZ100N03LS G-VB Detailed Parameters
| Parameter | Value |
|--------------------|--------------------------------------------|
| Package Type | DFN8(3x3) |
| Configuration | Single N-channel |
| Maximum Drain-Source Voltage (VDS) | 30V |
| Maximum Gate-Source Voltage (VGS) | ±20V |
| Threshold Voltage (Vth) | 1.7V |
| On-Resistance (RDS(ON)) | 19mΩ @ VGS=4.5V
13mΩ @ VGS=10V |
| Maximum Drain Current (ID) | 30A |
| Technology | Trench Technology |
Domain and module applications：
3. Application fields and module examples
1. **DC-DC Converter**: Due to its low on-resistance and high current capability, the BSZ100N03LS G-VB is suitable for use in high-efficiency DC-DC converters, such as power management modules in laptops, portable devices, and communication equipment. These converters require fast response and low power consumption MOSFETs to improve overall system efficiency.
2. **Power Management Module**: In power management of various electronic devices, this MOSFET can be used for voltage regulators and load switches. Its high current handling capability and low on-resistance make it excel in applications that require efficient power conversion and management, such as smartphones, tablets, and industrial control systems.
3. **Load Switch**: The high switching speed and low on-resistance of the BSZ100N03LS G-VB make it an ideal choice for load switch applications. It can effectively control the on and off of power, and is suitable for computer motherboards, servers, and other equipment that requires precise power control.
4. **Motor Drive**: This MOSFET performs well in motor drive applications, especially for drive circuits of brushless DC motors (BLDC) and stepper motors. Its high current capacity and low on-resistance help reduce power consumption in motor drives and improve system reliability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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