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BSZ088N03LS G-VB Product details

Product introduction:

1. Product Introduction

BSZ088N03LS G-VB is a high-performance single-stage N-channel MOSFET launched by Infineon Technologies, designed for high-efficiency power management applications. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, this MOSFET is packaged in a compact DFN8 (3x3 mm) package, suitable for space-constrained designs. Its advanced trench technology enables it to have low on-resistance and high current handling capabilities, ensuring excellent performance in power switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 30A 19(mΩ) 13(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
2. Detailed parameter description

- **Package type:** DFN8 (3x3 mm)
- **Configuration:** Single-stage N-channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- At VGS = 4.5V: 19mΩ
- At VGS = 10V: 13mΩ
- **Continuous leakage current (ID):** 30A
- **Technology:** Trench technology

Domain and module applications:

3. Applications and module examples

- **Power modules:** The BSZ088N03LS G-VB is ideal for DC-DC converters and power modules. Its low RDS(ON) and high current handling capability help reduce power losses and improve efficiency, which is particularly critical for compact and efficient power supplies in telecommunications and networking equipment.

- **Motor control circuits:** In motor control applications in electric vehicles or industrial automation, the high current handling capability and stability of the BSZ088N03LS G-VB ensure reliable operation. The MOSFET can efficiently switch motor drive circuits to achieve precise control of motor speed and torque.

- **Battery Management System (BMS):** This MOSFET is ideal for battery protection circuits in electric vehicles and portable electronic devices. Its high current handling capability and low on-resistance minimize power losses, thereby improving the overall efficiency and safety of the battery management system.

- **Consumer Electronics:** In devices such as laptops, smartphones and tablets, the BSZ088N03LS G-VB can be used in power management units to ensure efficient power distribution and thermal management. Its compact DFN8 package enables it to be integrated into thin and light designs, maintaining high performance without sacrificing space.

- **Renewable Energy Systems:** This MOSFET is suitable for renewable energy systems such as solar inverters and wind power generation controllers. Its high efficiency and reliability make it an ideal choice for improving the performance and life of renewable energy systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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