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BSZ086P03NS3E G-VB Product details

Product introduction:

BSZ086P03NS3E G-VB MOSFET Product Introduction

The BSZ086P03NS3E G-VB is a high-performance power MOSFET designed by Infineon Technologies. This unipolar P-channel MOSFET is packaged in a compact DFN8 (3x3) package, making it ideal for space-constrained applications. Its advanced trench technology ensures low on-resistance and high efficiency, making it an excellent performer in a variety of power management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-P -30V -2.5V -45A 18(mΩ) 11(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-P -30V -2.5V -45A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-P -30V -2.5V -45A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-P
Detailed parameter description

- **Package type: ** DFN8 (3x3)
- **Configuration: ** Unipolar P-channel
- **Drain-source voltage (VDS): ** -30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -2.5V
- **On-resistance (RDS(ON)): **
- 18mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Continuous drain current (ID): ** -45A
- **Technology: ** Trench technology

Domain and module applications:

Application Examples in Different Fields and Modules

1. **Power Management for Portable Devices: **
BSZ086P03NS3E G-VB is ideal for power management in portable devices such as smartphones, tablets and laptops due to its low on-resistance and compact package. It helps improve battery efficiency, extend battery life and reduce power consumption.

2. **DC-DC Converter: **
This MOSFET is suitable for DC-DC converter applications, especially as a high-side switch in a buck converter. Its high current handling capability and low RDS(ON) contribute to efficient conversion and reduced heat generation.

3. **Motor Control: **
In motor control applications, such as drones and robotic systems, the BSZ086P03NS3E G-VB can be used to efficiently control the speed and direction of the motor. Its high current handling capability ensures the ability to drive high-power motors.

4. **Load Switch:**
This MOSFET can be used in a variety of load switch applications, including industrial automation and home appliances. Its robust design and low gate charge make it suitable for switching inductive loads and reducing power consumption.

5. **Battery Protection Circuit:**
Due to its ability to handle high currents and low on-resistance, the MOSFET is ideal for battery protection circuits in electric vehicles and energy storage systems, ensuring safe and efficient operation.

The characteristics of the BSZ086P03NS3E G-VB make it a versatile component in multiple application areas, ensuring high performance and reliability in a variety of fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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