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BSZ067N06LS3 G-VB Product details

Product introduction:

Product Introduction

BSZ067N06LS3 G-VB is a high-performance single-tube N-channel MOSFET in DFN8 (3X3) package. This MOSFET supports 60V drain-source withstand voltage and ±20V gate-source withstand voltage, and the threshold voltage is 3V. It is manufactured using Trench technology and has extremely low on-resistance, making it suitable for high current and high-performance switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 60V 3V 30A 5(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 60V 3V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 60V 3V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
Parameter description

- **Model**: BSZ067N06LS3 G-VB
- **Package**: DFN8(3X3)
- **Configuration**: Single tube N-channel
- **Drain-source withstand voltage (VDS)**: 60V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- Under 10V gate drive: 5mΩ
- **Drain current (ID)**: 30A
- **Technology**: Trench technology

Domain and module applications:

Applications

BSZ067N06LS3 G-VB is suitable for the following fields and modules:

1. **Power Management**: Suitable for switch control in power management systems, especially in high current applications such as DC-DC converters and power modules.
2. **Power Amplifier**: As a switching element in the power amplifier, it is used for efficient power switching, ensuring high efficiency and low loss.
3. **Electric Vehicle**: Suitable for battery management systems and motor drive systems in electric vehicles, providing reliable high current switch control.
4. **High-Efficiency Switching Circuit**: In applications requiring high current and low on-resistance, such as server power supplies and high-power power modules, it is used to improve system efficiency and performance.

The low on-resistance and high current carrying capacity of this MOSFET make it excel in switching applications requiring high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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