Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
100V |
20（±V） |
1.5V |
0.26A |
|
3000(mΩ) |
2800(mΩ) |
|
Parameter description
- **Model**: BST82-VB
- **Package**: SOT23-3
- **Configuration**: Single tube N-channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**:
- Under 4.5V gate drive: 3000mΩ
- Under 10V gate drive: 2800mΩ
- **Drain current (ID)**: 0.26A
- **Technology**: Trench technology
Domain and module applications：
Applications
BST82-VB is suitable for the following areas and modules:
1. **High Voltage Switch**: Due to its high withstand voltage of up to 100V, it is suitable for high voltage switching applications such as power switches and high voltage control circuits.
2. **Power Protection**: As a high voltage switch in the power protection circuit, it provides current switching and voltage protection functions.
3. **Signal Switch**: Used in applications that handle high voltage signals, it is suitable for high voltage signal switching despite its high on resistance.
4. **Low Power Switch**: Suitable for switch control in low power devices, especially when high voltage needs to be handled, such as switching elements in consumer electronics.
The high voltage withstand capability of this MOSFET makes it excel in applications that need to handle high voltage and low power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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