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BSS138P-VB Product details
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Product Introduction
**BSS138P-VB** is a high voltage single N-channel MOSFET manufactured using Trench technology and packaged in SOT23-3. This MOSFET has a drain-source voltage (VDS) of up to 60V and a maximum gate-source voltage (VGS) of 20V. Its design focuses on providing reliable switching performance and current control, and is suitable for a variety of high voltage, low power circuit applications.
**BSS138P-VB** is a high voltage single N-channel MOSFET manufactured using Trench technology and packaged in SOT23-3. This MOSFET has a drain-source voltage (VDS) of up to 60V and a maximum gate-source voltage (VGS) of 20V. Its design focuses on providing reliable switching performance and current control, and is suitable for a variety of high voltage, low power circuit applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 3100(mΩ) | 2800(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Parameter description
- **Model**: BSS138P-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench
- **Model**: BSS138P-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
**BSS138P-VB** is mainly suitable for the following fields and modules:
1. **High voltage switching circuit**: Used in switching circuits that require high voltage processing, such as high voltage power switches, to provide reliable switching operations.
2. **Power management**: Used as a switch or control device in high voltage power management systems to support high voltage power conversion and current control.
3. **Signal conditioning**: Used in high voltage signal conditioning and processing circuits, it can process high voltage signals and provide stable switching performance.
4. **Small appliances**: Suitable for switching and control functions in small electrical equipment with high voltage, suitable for handling low current loads.
The high voltage handling capability and moderate on-resistance of this MOSFET make it stable in various high voltage and low power applications.
**BSS138P-VB** is mainly suitable for the following fields and modules:
1. **High voltage switching circuit**: Used in switching circuits that require high voltage processing, such as high voltage power switches, to provide reliable switching operations.
2. **Power management**: Used as a switch or control device in high voltage power management systems to support high voltage power conversion and current control.
3. **Signal conditioning**: Used in high voltage signal conditioning and processing circuits, it can process high voltage signals and provide stable switching performance.
4. **Small appliances**: Suitable for switching and control functions in small electrical equipment with high voltage, suitable for handling low current loads.
The high voltage handling capability and moderate on-resistance of this MOSFET make it stable in various high voltage and low power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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