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BSS138-7-F-VB Product details
Back to previous pageProduct introduction：
**Product Introduction: **
BSS138-7-F-VB is an N-Channel MOSFET packaged in SOT23-3, suitable for medium voltage small switch applications. The VDS (maximum drain-source voltage) of this MOSFET is 60V, the maximum gate-source voltage VGS is ±20V, and the drain current ID reaches 0.3A. Its on-resistance RDS(ON) is 3100mΩ (at VGS=4.5V) and 2800mΩ (at VGS=10V). It uses trench process technology and is suitable for low-power, small switch circuits.
BSS138-7-F-VB is an N-Channel MOSFET packaged in SOT23-3, suitable for medium voltage small switch applications. The VDS (maximum drain-source voltage) of this MOSFET is 60V, the maximum gate-source voltage VGS is ±20V, and the drain current ID reaches 0.3A. Its on-resistance RDS(ON) is 3100mΩ (at VGS=4.5V) and 2800mΩ (at VGS=10V). It uses trench process technology and is suitable for low-power, small switch circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 3100(mΩ) | 2800(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
**Detailed parameter description: **
- **Package**: SOT23-3
- **Type**: Unipolar N-Channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3100mΩ @ VGS = 4.5V; 2800mΩ @ VGS = 10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench process
Domain and module applications：
*Application areas and module examples: **
1. **Small power switch**: In low-power and small power management applications, the BSS138-7-F-VB can be used for efficient power switching, suitable for space-constrained designs such as portable electronic devices and small power modules.
2. **Signal switch**: In low-current signal switching and control circuits, this MOSFET can be used as a signal switch, suitable for switch control in small electronic circuits.
3. **Overvoltage protection**: In applications requiring medium voltage protection, the BSS138-7-F-VB can be used as an overvoltage protection device to ensure the safety of electronic equipment under overvoltage conditions.
1. **Small power switch**: In low-power and small power management applications, the BSS138-7-F-VB can be used for efficient power switching, suitable for space-constrained designs such as portable electronic devices and small power modules.
2. **Signal switch**: In low-current signal switching and control circuits, this MOSFET can be used as a signal switch, suitable for switch control in small electronic circuits.
3. **Overvoltage protection**: In applications requiring medium voltage protection, the BSS138-7-F-VB can be used as an overvoltage protection device to ensure the safety of electronic equipment under overvoltage conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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