Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
650V |
30（±V） |
3.5V |
1A |
|
|
8400(mΩ) |
|
**2. Detailed parameter description: **
- **Package**: SOT23-3
- **Configuration**: Unipolar N-Channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Gate Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 8400mΩ (at VGS=10V)
- **Drain Current (ID)**: 1A
- **Technology**: Plannar
Domain and module applications：
**3. Application examples: **
BSS127SSN-7-VB is suitable for high voltage switching and protection circuits, such as power protection, current limiting, electrical isolation and high voltage switching applications. Due to its high voltage withstand capability and moderate on-resistance, this MOSFET is suitable for applications that need to handle high voltage but relatively low current, such as switching power supplies and high voltage protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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