BSS127SSN-7-VB Product details
Product introduction:
BSS127SSN-7-VB is a high-voltage N-Channel MOSFET packaged in SOT23-3. Using Plannar technology, it can withstand drain-source voltages up to 650V and is suitable for high-voltage and low-current switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 650V | 3.5V | 1A | 8400(mΩ) | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 650V | 3.5V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 650V | 3.5V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
**2. Detailed parameter description: **
- **Package**: SOT23-3
- **Configuration**: Unipolar N-Channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Gate Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 8400mΩ (at VGS=10V)
- **Drain Current (ID)**: 1A
- **Technology**: Plannar
Domain and module applications:
BSS127SSN-7-VB is suitable for high voltage switching and protection circuits, such as power protection, current limiting, electrical isolation and high voltage switching applications. Due to its high voltage withstand capability and moderate on-resistance, this MOSFET is suitable for applications that need to handle high voltage but relatively low current, such as switching power supplies and high voltage protection circuits.
Technical support:
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