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BSS123-NL-VB Product details
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Product Introduction
**BSS123-NL-VB** is a high voltage single N-channel MOSFET manufactured using Trench technology and packaged in SOT23-3. This MOSFET has a drain-source voltage (VDS) of up to 100V and a maximum gate-source voltage (VGS) of 20V. It is designed with a focus on providing good switching performance and reliable current control, and is suitable for circuits requiring high voltage and low power applications.
**BSS123-NL-VB** is a high voltage single N-channel MOSFET manufactured using Trench technology and packaged in SOT23-3. This MOSFET has a drain-source voltage (VDS) of up to 100V and a maximum gate-source voltage (VGS) of 20V. It is designed with a focus on providing good switching performance and reliable current control, and is suitable for circuits requiring high voltage and low power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.5V | 0.26A | 3000(mΩ) | 2800(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.5V | 0.26A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.5V | 0.26A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Parameter description
- **Model**: BSS123-NL-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON)）**:
- 3000mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.26A
- **Technology**: Trench
- **Model**: BSS123-NL-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON)）**:
- 3000mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.26A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
**BSS123-NL-VB** is mainly suitable for the following fields and modules:
1. **High voltage switching circuit**: Used in switching circuits that need to handle high voltages, such as high voltage power switches and load switches, to provide reliable switching performance.
2. **Power management**: In high voltage power management systems, as a switch or control device, suitable for high voltage power conversion and current control.
3. **Signal conditioning**: Used in high voltage signal processing and conditioning circuits, capable of processing high voltage signals and providing good switching performance.
4. **Small electronic devices**: Suitable for switching and control functions in high voltage small electronic devices, providing stable current handling capabilities.
The high voltage handling capability and relatively high on-resistance of this MOSFET make it stable in a variety of high voltage and low power applications.
**BSS123-NL-VB** is mainly suitable for the following fields and modules:
1. **High voltage switching circuit**: Used in switching circuits that need to handle high voltages, such as high voltage power switches and load switches, to provide reliable switching performance.
2. **Power management**: In high voltage power management systems, as a switch or control device, suitable for high voltage power conversion and current control.
3. **Signal conditioning**: Used in high voltage signal processing and conditioning circuits, capable of processing high voltage signals and providing good switching performance.
4. **Small electronic devices**: Suitable for switching and control functions in high voltage small electronic devices, providing stable current handling capabilities.
The high voltage handling capability and relatively high on-resistance of this MOSFET make it stable in a variety of high voltage and low power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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