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BSS123-7-VB Product details
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Product Introduction
BSS123-7-VB is a high voltage single tube N-channel MOSFET, packaged in SOT23-3. This MOSFET has a drain-source withstand voltage of 100V and a gate-source withstand voltage of ±20V, and a threshold voltage of 1.5V. It is manufactured using Trench technology. Although the on-resistance is higher, it is still suitable for some switching applications that require high voltage tolerance.
BSS123-7-VB is a high voltage single tube N-channel MOSFET, packaged in SOT23-3. This MOSFET has a drain-source withstand voltage of 100V and a gate-source withstand voltage of ±20V, and a threshold voltage of 1.5V. It is manufactured using Trench technology. Although the on-resistance is higher, it is still suitable for some switching applications that require high voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.5V | 0.26A | 3000(mΩ) | 2800(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.5V | 0.26A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 1.5V | 0.26A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Parameter description
- **Model**: BSS123-7-VB
- **Package**: SOT23-3
- **Configuration**: Single tube N-channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**:
- Under 4.5V gate drive: 3000mΩ
- Under 10V gate drive: 2800mΩ
- **Drain current (ID)**: 0.26A
- **Technology**: Trench technology
- **Model**: BSS123-7-VB
- **Package**: SOT23-3
- **Configuration**: Single tube N-channel
- **Drain-source withstand voltage (VDS)**: 100V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**:
- Under 4.5V gate drive: 3000mΩ
- Under 10V gate drive: 2800mΩ
- **Drain current (ID)**: 0.26A
- **Technology**: Trench technology
Domain and module applications：
Applications
BSS123-7-VB is suitable for the following fields and modules:
1. **High voltage switch**: Due to its withstand voltage of up to 100V, it is suitable for switch applications that require high voltage tolerance, such as power switching and high voltage control.
2. **Signal switch**: In signal switch applications, despite the high on-resistance, its high withstand voltage characteristics make it suitable for handling higher voltage signals.
3. **Protection circuit**: Used in protection circuits as a switching element under high voltage to provide current switching and voltage protection.
4. **Low power switch**: As a switching element in low power devices, especially in situations where high voltage is required, such as switch control in electronic equipment.
The high voltage withstand capability of this MOSFET gives it an advantage in handling high voltage switching and protection applications.
BSS123-7-VB is suitable for the following fields and modules:
1. **High voltage switch**: Due to its withstand voltage of up to 100V, it is suitable for switch applications that require high voltage tolerance, such as power switching and high voltage control.
2. **Signal switch**: In signal switch applications, despite the high on-resistance, its high withstand voltage characteristics make it suitable for handling higher voltage signals.
3. **Protection circuit**: Used in protection circuits as a switching element under high voltage to provide current switching and voltage protection.
4. **Low power switch**: As a switching element in low power devices, especially in situations where high voltage is required, such as switch control in electronic equipment.
The high voltage withstand capability of this MOSFET gives it an advantage in handling high voltage switching and protection applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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