Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
26(mΩ) |
19(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Model**: BSO330N02K G-VB
- **Package**: SOP8
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 26mΩ (@VGS=4.5V)
- 19mΩ (@VGS=10V)
- **Drain current (ID)**: 7.1A
- **Technology**: Trench
Domain and module applications:
3. Application Fields and Modules
BSO330N02K G-VB MOSFET is suitable for a variety of high-efficiency applications due to its low on-resistance and efficient switching performance. Here are some examples of specific applications:
1. **Power Management**:
In power management systems, BSO330N02K G-VB MOSFET is used for power switching and voltage regulation. Its dual N-channel design enables it to effectively handle power switching and power conversion tasks, improving the overall efficiency and stability of the system.
2. **Load Switch**:
This MOSFET performs well in load switching applications. Its low RDS(ON) characteristics and high current capability make it suitable for switching loads, especially in applications that require high switching frequencies and low power consumption, such as computer motherboards, power adapters and other electronic devices.
3. **Power Tools**:
In power tools, BSO330N02K G-VB can be used as motor drive and power management. Its high current handling capability and low on-resistance help provide stable power and control the operation of motors, improving the performance and durability of power tools.
4. **Portable Electronic Devices**:
In portable electronic devices, such as smartphones and portable computers, the BSO330N02K G-VB is used for power management and load switching. Its high efficiency and low power consumption can improve the battery life and overall performance of the device.
5. **LED Drive Circuit**:
In LED drive circuits, the BSO330N02K G-VB can be used to control the current and switch of LEDs. Its low RDS(ON) helps reduce power loss and improve the brightness and life of LEDs.
These application examples demonstrate the wide applicability of the BSO330N02K G-VB MOSFET in high current and high efficiency applications, especially in the key areas of power management and load switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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