中文
English
BSH121-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**BSH121-VB** is a unipolar N-channel power MOSFET packaged in SOT23-3. The MOSFET has a drain-source voltage (VDS) of 60V and supports a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, the on-resistance is 3100mΩ (VGS=4.5V) and 2800mΩ (VGS=10V), and the maximum leakage current is 0.3A. The MOSFET uses trench technology and is suitable for low voltage and low current switching applications.
**BSH121-VB** is a unipolar N-channel power MOSFET packaged in SOT23-3. The MOSFET has a drain-source voltage (VDS) of 60V and supports a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, the on-resistance is 3100mΩ (VGS=4.5V) and 2800mΩ (VGS=10V), and the maximum leakage current is 0.3A. The MOSFET uses trench technology and is suitable for low voltage and low current switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 3100(mΩ) | 2800(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Detailed parameter description
- **Model**: BSH121-VB
- **Package**: SOT23-3
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench technology
- **Model**: BSH121-VB
- **Package**: SOT23-3
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules
**BSH121-VB** power MOSFET is suitable for the following fields and modules:
1. **Low-power switching circuit**: As a switching element in low-voltage and low-current switching applications, it is suitable for small power management and switch control of electronic devices.
2. **Battery-powered devices**: Used in mobile devices and small battery-powered devices for current control and power management to ensure efficient energy utilization of the equipment.
3. **Small motor drive**: In low-power motor drive systems, it is used for switch control of small current loads, suitable for small motors and micro drive applications.
4. **Consumer electronics**: Used in consumer electronics such as portable devices and circuit protection modules to handle low-current switching requirements and optimize power efficiency and device performance.
**BSH121-VB** power MOSFET is suitable for the following fields and modules:
1. **Low-power switching circuit**: As a switching element in low-voltage and low-current switching applications, it is suitable for small power management and switch control of electronic devices.
2. **Battery-powered devices**: Used in mobile devices and small battery-powered devices for current control and power management to ensure efficient energy utilization of the equipment.
3. **Small motor drive**: In low-power motor drive systems, it is used for switch control of small current loads, suitable for small motors and micro drive applications.
4. **Consumer electronics**: Used in consumer electronics such as portable devices and circuit protection modules to handle low-current switching requirements and optimize power efficiency and device performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
