Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
3100(mΩ) |
2800(mΩ) |
|
Detailed parameter description
- **Model**: BSH121-VB
- **Package**: SOT23-3
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules
**BSH121-VB** power MOSFET is suitable for the following fields and modules:
1. **Low-power switching circuit**: As a switching element in low-voltage and low-current switching applications, it is suitable for small power management and switch control of electronic devices.
2. **Battery-powered devices**: Used in mobile devices and small battery-powered devices for current control and power management to ensure efficient energy utilization of the equipment.
3. **Small motor drive**: In low-power motor drive systems, it is used for switch control of small current loads, suitable for small motors and micro drive applications.
4. **Consumer electronics**: Used in consumer electronics such as portable devices and circuit protection modules to handle low-current switching requirements and optimize power efficiency and device performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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