Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
3100(mΩ) |
2800(mΩ) |
|
**Detailed parameter description: **
- **Package**: SOT23-3
- **Type**: Unipolar N-Channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3100mΩ @ VGS = 4.5V; 2800mΩ @ VGS = 10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench process
Domain and module applications：
Applications and module examples: **
1. **Small power switch**: In small power management and switching circuits, the medium on-resistance and high VDS of BSH112-VB make it suitable for low-power switching applications such as small power switches and protection circuits.
2. **Low-power electronic devices**: For low-power electronic devices and portable devices, BSH112-VB can provide sufficient current handling capability and is suitable for designs with limited space.
3. **Signal switch**: In signal switching and analog circuits, this MOSFET can be used as a switch control, supporting medium voltage and current applications, and is suitable for small, low-power circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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