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BSC0901NS-VB Product details

Product introduction:

1. Product Introduction

**Model: BSC0901NS-VB**

BSC0901NS-VB is a high-performance single N-channel MOSFET in DFN8 (5x6) package. Manufactured using advanced Trench technology, this MOSFET has extremely low on-resistance and high current handling capability, and is designed for high-efficiency power management and switching applications. BSC0901NS-VB supports drain-source voltage (VDS) up to 30V and gate-source voltage (VGS) of ±20V, and its threshold voltage (Vth) is 1.7V, ensuring reliable turn-on at lower gate voltages. The on-resistance (RDS(ON)) of this MOSFET is 2.5mΩ at a gate voltage of 4.5V and 1.8mΩ at a gate voltage of 10V. It can provide a continuous drain current (ID) of up to 160A, and performs well in high-current and high-efficiency applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 160A 2.5(mΩ) 1.8(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 160A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 160A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
2. Detailed parameter description

- **Model**: BSC0901NS-VB
- **Package**: DFN8(5x6)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @VGS = 4.5V: 2.5mΩ
- @VGS = 10V: 1.8mΩ
- **Continuous drain current (ID)**: 160A
- **Technology**: Trench

Domain and module applications:

3. Application fields and module examples

**Power management system**: BSC0901NS-VB is very suitable for efficient power management systems due to its extremely low on-resistance and high current handling capability. In DC-DC converters, switching power supplies and high-performance power supply units, this MOSFET can significantly reduce power consumption and improve system efficiency, and is suitable for use in computer power supplies, communication equipment power supplies and consumer electronics.

**Electric vehicles**: In the motor drive and battery management system of electric vehicles, the high current capability and low RDS(ON) characteristics of BSC0901NS-VB enable it to handle large currents and ensure system stability and efficiency. This is crucial for electric vehicle motor control and battery charge/discharge management, helping to improve the performance and endurance of electric vehicles.

**Industrial power supply**: BSC0901NS-VB is suitable for high-power industrial power applications such as inverters and industrial power supply units. Its high current handling capability and low on-resistance can handle high-power loads, ensuring efficient operation and long-term stability of the system, and is suitable for use in various industrial power and power systems.

**LED Driver**: For high-power LED lighting applications, the low on-resistance provided by BSC0901NS-VB can effectively reduce power consumption and heat, and improve the efficiency and service life of LEDs. This makes it an excellent performer in high-brightness LED lighting systems and high-power LED driver modules.

**High-performance Switch**: In switching applications that require high current and low power consumption, such as motor drives, power conversion, and high-power switch modules, BSC0901NS-VB is able to provide stable and efficient switching performance. Its high current capability and low on-resistance make it an ideal choice for efficient switching systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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