Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
60V |
|
2.5V |
80A |
|
7(mΩ) |
6(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
60V |
|
2.5V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
60V |
|
2.5V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
BSC067N06LS3 G-VB MOSFET Detailed parameter description
- **Package type:** DFN8(5x6)
- **Configuration:** Single N-channel
- **Maximum drain-source voltage (VDS):** 60V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 2.5V
- **On-resistance (RDS(ON)):**
- 7mΩ at VGS = 4.5V
- 6mΩ at VGS = 10V
- **Continuous drain current (ID):** 80A
- **Technology:** Trench technology
Domain and module applications：
Applications of BSC067N06LS3 G-VB MOSFET
BSC067N06LS3 G-VB MOSFET excels in multiple fields due to its high current handling capability and low on-resistance. For example, in power management systems, this MOSFET can be used in efficient power switches and power regulation modules to handle high current loads while reducing power consumption. In the field of electric vehicles, it is suitable for motor control systems and power management modules to ensure efficient and stable current supply. In industrial applications, BSC067N06LS3 G-VB can be used in motor drives and high-power conversion devices to provide reliable high-current switching functions and reduce energy losses. In addition, this MOSFET is also suitable for high-efficiency LED drivers and other high-power electronic devices to improve overall performance and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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