BR50N06-VB MOSFET Product Introduction

The BR50N06-VB is a high-performance single N-channel MOSFET packaged in a TO-220 housing. This MOSFET is designed for applications that require high current handling and high efficiency. Its maximum drain-source voltage (VDS) is 60V and its gate-source voltage (VGS) tolerance is ±20V, making it suitable for a variety of power management and switching applications. The threshold voltage (Vth) of the BR50N06-VB is 1.7V, ensuring reliable startup at low gate voltages. The on-resistance (RDS(ON)) of this MOSFET is 13mΩ at VGS = 4.5V and 11mΩ at VGS = 10V, providing good power efficiency and low power consumption. Its continuous drain current (ID) is up to 60A, making it suitable for applications that handle larger currents. The BR50N06-VB uses advanced trench technology to optimize its switching performance and overall energy efficiency.