Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
24/50(mΩ) |
18/40(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package: ** SOP8
- **Configuration: ** Dual N+P-Channel
- **Drain-source voltage (VDS): ** ±30V
- **Gate-source voltage (VGS): ** 20 (±V)
- **Threshold voltage (Vth): ** 1.6V (N-Channel), -1.7V (P-Channel)
- **On-resistance (RDS(ON)): **
- N-Channel: 24mΩ at 4.5V, 18mΩ at 10V
- P-Channel: 50mΩ at 4.5V, 40mΩ at 10V
- **Continuous drain current (ID): ** ±8A
- **Technology: ** Trench technology
Domain and module applications：
Applications and Modules
1. **Power Management Circuits:**
- The low on-resistance and dual N+P-Channel configuration of the APM9928KC-TRL-VB make it ideal for power management circuits such as DC-DC converters and power regulator modules. It can efficiently control the flow of power and improve the conversion efficiency of the system.
2. **Load Switch:**
- Due to its dual MOSFET configuration, this model is ideal for load switch applications. In various electronic devices, it can effectively control the switching operation of the load, such as achieving efficient load switching in battery-powered devices.
3. **Motor Control:**
- The high current carrying capacity and low RDS(ON) characteristics of the APM9928KC-TRL-VB make it excellent in motor control systems. For example, in a DC motor drive, this MOSFET can stably drive the motor and optimize control performance.
4. **Power Amplifier:**
- The excellent switching performance and low power consumption characteristics of this MOSFET make it suitable for use in power amplifier designs, such as audio power amplifiers and RF power amplifiers. It can effectively improve the performance and efficiency of power amplifiers.
5. **Portable Devices:**
- The SOP8 package of APM9928KC-TRL-VB is suitable for compact portable device applications. In these devices, the efficient power control and low power consumption characteristics of MOSFET help to extend battery life and improve the overall performance of the device.
In short, APM9928KC-TRL-VB is a versatile dual N+P-Channel MOSFET suitable for power management, load switching, motor control, power amplifiers and portable devices, providing efficient and reliable power control and switching solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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