Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
19(mΩ) |
13(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
II. Detailed parameter description
1. **Package type**: DFN8(3X3)
2. **Configuration**: Single-N-Channel
3. **Breakdown voltage (VDS)**: 30V
4. **Gate voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- @VGS = 4.5V: 19mΩ
- @VGS = 10V: 13mΩ
7. **Drain current (ID)**: 30A
8. **Technology**: Trench
Domain and module applications：
III. Application fields and module examples
**AP4820GYT-HF-VB** MOSFET is suitable for the following fields and modules due to its small size, high performance and low on-resistance:
1. **Power Management Modules**:
- In lightweight power converters and regulators, it is used for efficient power management and conversion.
2. **Portable Devices**:
- In tablets, smartphones and portable electronic devices, it is a key component for battery management and power control.
3. **Power Tools**:
- For motor drivers of power tools, it supports high current and frequency motor control, improving the performance and life of tools.
4. **LED Drivers**:
- In LED lighting systems, it is used as a high-efficiency current regulator and switch to improve the energy efficiency and reliability of lighting systems.
5. **Automotive Electronics**:
- In automotive electronic systems, such as body control units and battery management systems, it is used for power switching and power management to improve the performance and energy saving of automotive electronic equipment.
**AP4820GYT-HF-VB** MOSFET's design makes it particularly suitable for compact electronic devices and systems that require high power density and low resistance, providing modern electronic engineers with a flexible and reliable solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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