Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-P |
-12V |
|
-0.8V |
-25A |
21(mΩ) |
15(mΩ) |
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-P |
-12V |
|
-0.8V |
-25A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-P |
-12V |
|
-0.8V |
-25A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-P |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Package type**: DFN8(3X3)
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -12V
- **Gate-source voltage (VGS)**: ±8V
- **Threshold voltage (Vth)**: -0.8V
- **On-resistance (RDS(ON))**:
- 21mΩ @ VGS = 2.5V
- 15mΩ @ VGS = 4.5V
- **Drain current (ID)**: -25A
- **Technology type**: Trench
Domain and module applications:
3. Application fields and module examples
1. **Portable electronic devices**: Due to its compact package and good power management characteristics, the AP2609GYT-HF-VB is suitable for portable electronic devices such as smartphones, tablets, and portable audio devices. Its low on-resistance and high efficiency can improve battery life and device operation time.
2. **Battery protection circuit**: In the battery management system, this MOSFET can be used as a battery protection and charge and discharge controller. Its fast response and low power consumption characteristics help protect the battery from damage caused by overcurrent and overvoltage, extending the battery life.
3. **Power switch control**: The AP2609GYT-HF-VB is suitable for various power switch control applications, such as power switches, DC-DC converters, and chargers. Its high current handling capability and stable electrical characteristics ensure reliable operation of the device under high load and unstable power conditions.
4. **Low Voltage Circuit Breaker**: This MOSFET can be used in the switch control circuit of a low voltage circuit breaker to protect the circuit from current overload and short circuit damage. Its high current and low on-resistance characteristics make it an ideal choice for circuit breaker systems.
With its compact package and superior electrical performance, the AP2609GYT-HF-VB is suitable for a variety of portable and low-power electronic equipment applications that require efficient power control and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours