Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-P+P |
-30V |
|
-2.5V |
-12A |
|
13(mΩ) |
11(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-P+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-P+P |
-30V |
|
-2.5V |
-12A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-P+P |
-30V |
|
-2.5V |
-12A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-P+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Dual P+P channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- **Drain current (ID)**: -12A @ VGS = 10V
- **Technology**: Trench
Domain and module applications：
Application fields and modules
AFP4925WSS8RG-VB MOSFET can be used in the following fields and modules:
1. **Power management**: Suitable for power management units in laptops, tablets and other portable electronic devices to help improve battery life and power efficiency.
2. **Power tools**: As a key component of the motor drive circuit in power tools, it supports high efficiency and long working time.
3. **Automotive electronics**: In automotive electronic systems, it is used as an important component of battery management and vehicle power control circuits to ensure system stability and high efficiency.
4. **LED lighting**: Used as a switch and dimming controller for LED drive circuits to support high efficiency and long life operation of LED lamps.
5. **Industrial control**: In industrial automation systems, it is used as a component of switching power supplies and control devices to ensure equipment reliability and precise control.
In summary, AFP4925WSS8RG-VB is a dual P+P channel MOSFET suitable for various low-voltage, high-performance electronic devices. It has excellent conduction characteristics and high reliability, and can meet the multiple requirements of modern electronic devices for power management and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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