Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
4(mΩ) |
3.4(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: 60N32N3LL-VB
- **Package**: DFN8(5X6)-C
- **Configuration**: Half-bridge N+N channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=4.5V
- 3.4mΩ @ VGS=10V
- **Drain current (ID)**: 60A
- **Technology**: Trench
Domain and module applications:
Applications and module examples
1. **Power tools and electric vehicles**: In power tools and electric vehicles that require high power and high efficiency, the 60N32N3LL-VB can be used for power switches in motor drive control and battery management systems.
2. **Power converters**: Due to its low on-resistance and high current characteristics, it is suitable for DC-DC converters and switching power supplies to provide efficient power conversion and stable voltage output.
3. **Server and data center equipment**: In server and data center equipment that require high performance and reliable power management and power distribution, this MOSFET can be used in power modules and battery backup systems.
4. **Industrial control systems**: In industrial automation and control systems, such as frequency converters, motor drives, and inverters, it can provide reliable power switching and control.
5. **LED lighting system**: In lighting applications that require high-power LED driving and dimming control, this device can effectively control the power and brightness of LED modules, improving the efficiency and energy efficiency of lighting systems.
In summary, the 60N32N3LL-VB MOSFET has shown a wide range of application potentials in a variety of high-power and high-efficiency electronic devices with its excellent current carrying capacity, low on-resistance and high-efficiency characteristics. It is an ideal choice for designing power electronic systems that require high-performance power control and driving.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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