Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-N |
60V |
20(±V) |
1.7V |
0.3A |
|
3100(mΩ) |
2800(mΩ) |
|
2. 5LN01C-D-VB Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications:
III. Application fields and module examples
5LN01C-D-VB MOSFET has a wide range of applications in the following fields and modules:
1. **Low-power electronic devices**:
- Due to its low drain current and high drain-source voltage, 5LN01C-D-VB can be used in portable electronic devices, sensor interfaces and low-power control circuits such as smart watches, small sensor modules, etc.
2. **Battery management and charge and discharge protection**:
- In battery management systems and charge and discharge protection circuits, 5LN01C-D-VB can be used as a battery protection switch to effectively control current and protect batteries from overcurrent and overvoltage damage.
3. **Power switches and inverters**:
- Suitable for small power switches and inverter circuits, 5LN01C-D-VB can help achieve efficient power conversion and stable power output, suitable for applications that require lightweight and energy saving.
4. **Analog signal switching and control**:
- In analog signal processing and control circuits, 5LN01C-D-VB can be used as a signal switch and voltage regulator to provide precise signal processing and stable voltage output.
5. **Sensor signal processing**:
- Suitable for amplification and processing of sensor signals, 5LN01C-D-VB can help improve the sensitivity and response speed of the sensor and achieve accurate data acquisition and processing.
Through the above examples, the practical applications and advantages of 5LN01C-D-VB MOSFET in multiple fields such as low power, battery management, power switching and signal processing are demonstrated.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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