Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
100V |
|
1.8V |
5.8A |
|
|
63(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
100V |
|
1.8V |
5.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
100V |
|
1.8V |
5.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: 4N10ESS-VB
- **Package**: SOP8
- **Configuration**: Dual N+ N Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 63mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5.8A
- **Technology**: Trench
Domain and module applications:
Applications and module examples
1. **Power management and switching circuits**:
Due to its high voltage tolerance and low on-resistance, the 4N10ESS-VB can be used in various power management systems and switching circuits. For example, it can be used as a key component of a DC-DC converter to provide efficient energy conversion and stable power output.
2. **Power tools and electric vehicles**:
In the drive systems of power tools and electric vehicles, this MOSFET can be used for motor control and battery management. Its high drain current and low on-resistance characteristics help improve the performance and efficiency of the equipment.
3. **Industrial automation and robotic control**:
The 4N10ESS-VB is suitable for motor drive and power management in industrial automation equipment and robotic control systems. It can provide stable current output and efficient power conversion to ensure reliable operation of the equipment under various working conditions.
4. **Automotive Electronic Systems**:
In automotive electronic systems, this MOSFET can be used in engine control units (ECUs), electric power steering systems, on-board charging piles, and other high-voltage power modules. Its high voltage withstand capability and fast switching characteristics can meet the performance and reliability requirements of automotive electronic systems.
5. **Consumer Electronics**:
In the power management and switching circuits of consumer electronic products such as HDTVs, audio systems, and game consoles, 4N10ESS-VB can provide stable power output and low power consumption solutions to improve product performance and service life.
From the above examples, we can see the wide application and high performance characteristics of 4N10ESS-VB MOSFET, which is suitable for various electronic and electrical systems that require high voltage, high efficiency, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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