Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
850V |
|
3.5V |
4A |
|
|
2700(mΩ) |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
850V |
|
3.5V |
4A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
850V |
|
3.5V |
4A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: 3N80K5-VB
- **Package**: TO220
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 850V
- **Gate voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2700mΩ @ VGS = 10V
- **Drain current (ID)**: 4A
- **Technology**: Plannar
Domain and module applications：
Applicable fields and modules
3N80K5-VB MOSFET is suitable for multiple fields and modules, with a wide range of applications. Here are some specific application examples:
1. **Power converter**:
- Used in high-voltage switching power supplies and inverters to provide high-efficiency and reliable power conversion, suitable for industrial and consumer electronic devices.
2. **Medical equipment**:
- Used in high-voltage power management modules of medical equipment to ensure stable operation and safety of the equipment.
3. **Electric vehicle charging pile**:
- In electric vehicle charging piles, used to control current and voltage to ensure the safety and efficiency of the charging process.
4. **Power transmission**:
- Used in switches and control modules in high-voltage power transmission systems to provide reliable current switching and protection functions.
5. **Industrial control**:
- Used in high-voltage switch modules in industrial control systems to provide reliable current switching and protection functions.
With its high breakdown voltage and stability, 3N80K5-VB MOSFET is suitable for various high voltage and high power applications, providing reliable performance support for the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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