Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
200V |
20（±V） |
2.5V |
0.6A |
|
|
1400(mΩ) |
|
2SK4147-T2B-AT-VB Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 1400mΩ @ VGS = 10V
- **Drain current (ID)**: 0.6A
- **Technology**: Trench
Domain and module applications：
Applicable fields and module examples
1. **Signal switch**: 2SK4147-T2B-AT-VB can be used for low-power signal switching, such as audio signal switching and signal selectors. Its low on-resistance and moderate drain-source voltage make it an ideal choice.
2. **Power management**: In low-power power management, 2SK4147-T2B-AT-VB can be used for protection switches in power switching and battery management systems, providing reliable current control and low power consumption.
3. **Sensor interface**: In sensor interface circuits, 2SK4147-T2B-AT-VB can be used for sensor signal amplification and processing, and its low power characteristics help reduce system energy consumption.
In summary, 2SK4147-T2B-AT-VB is a MOSFET suitable for low-power applications. It has a high drain-source voltage and moderate on-resistance, and is widely used in signal switching, power management, and sensor interface.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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