Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
200V |
20（±V） |
2.5V |
0.6A |
|
|
1400(mΩ) |
|
Detailed parameter description
- **Package form**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 1400mΩ @ VGS=10V
- **Drain current (ID)**: 0.6A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules
2SK4035-VB is suitable for the following fields and modules:
1. **Low power supply**
- **Mobile phone charger**: In some low-power power supplies, this MOSFET can be used as a switching device to achieve efficient conversion and stable output of electric energy.
2. **Low power switch**
- **Low power switch circuit**: Suitable for some low-power switch circuits, such as small electronic devices, sensors, etc.
3. **Other applications**
- **Analog switch**: In some analog switch circuits, it is used to control the on and off of signals.
2SK4035-VB has a high drain-source voltage and moderate current carrying capacity. It is suitable for some occasions where the power requirements are not particularly high, and provides stable and reliable power management and control for electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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