Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC75-3 |
Single-N |
60V |
|
1.7V |
0.33A |
|
2000(mΩ) |
1200(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC75-3 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SC75-3 |
Single-N |
60V |
|
1.7V |
0.33A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SC75-3 |
Single-N |
60V |
|
1.7V |
0.33A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC75-3 |
Single-N |
|
|
|
|
|
|
|
II. Detailed parameter description
| Parameter name| Parameter value|
|----------------|----------------------------|
| Package type| SC75-3 |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 60V |
| Maximum gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 2000mΩ @ VGS=4.5V; 1200mΩ @ VGS=10V |
| Maximum drain current (ID) | 0.33A |
| Technology| Trench |
Domain and module applications:
III. Application Fields and Modules
VBsemi 2SK3546J-VB MOSFET has a wide range of applications in various fields and modules. The following are several major application scenarios:
1. **Mobile devices: **
Due to its low power characteristics, 2SK3546J-VB can be used in various mobile devices, such as power management and control circuits of smartphones, tablets and portable electronic devices.
2. **Consumer Electronics: **
In some consumer electronic products, such as TVs, audio systems and game consoles, the device can be used for control and management circuits to improve the efficiency and reliability of the equipment.
3. **Medical Equipment: **
In some low-power medical equipment, 2SK3546J-VB can be used in various control and management circuits to ensure stable operation and high efficiency of the equipment.
4. **Industrial Control: **
In some low-power industrial control systems, the device can also play a role, such as sensor interface, motor control and power management.
Through the introduction of the above application scenarios, it can be seen that VBsemi 2SK3546J-VB is a low-power, high-performance power MOSFET, suitable for use in a variety of electronic devices and systems with low voltage and low power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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