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2SK2895-01_05-VB Product details

Product introduction:

1. 2SK2895-01_05-VB Product Introduction

2SK2895-01_05-VB is a single N-channel MOSFET produced by VBsemi and is packaged in TO220. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of 20V, this MOSFET is able to provide efficient and reliable performance in low-voltage applications. This product uses trench technology to ensure stability and durability in different applications. Its maximum drain current (ID) is 60A, and its on-resistance (RDS(ON)) is 13mΩ at a VGS of 4.5V and 11mΩ at a VGS of 10V. This device is suitable for applications that require low voltage and high current.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 60V 1.7V 60A 13(mΩ) 11(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 60V 1.7V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 60V 1.7V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. 2SK2895-01_05-VB Detailed parameter description

- **Package form**: TO220
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: 20V (±)
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @ VGS=4.5V: 13mΩ
- @ VGS=10V: 11mΩ
- **Drain current (ID)**: 60A
- **Technology**: Trench technology
- **Other parameters**:
- Gate charge (Qg): To be determined
- Reverse recovery time (trr): To be determined
- Inductive load switching time (tsw): To be determined
- Package size: TBD
- Operating temperature range: TBD

Domain and module applications:

3. Application fields and module examples

2SK2895-01_05-VB MOSFET is suitable for various low-voltage and high-power scenarios due to its low voltage and high current capabilities. Here are some specific application fields and modules:

1. **Power module**: In low-voltage power modules that require high power output, 2SK2895-01_05-VB can provide reliable power switching and current control, so that the power module has better efficiency and reliability.

2. **Motor driver**: In low-voltage and high-power motor control systems, 2SK2895-01_05-VB can provide efficient current control and voltage regulation to ensure stable operation and high-efficiency conversion of the motor.

3. **Battery management system**: In battery management systems that require high current charging and discharging, 2SK2895-01_05-VB can provide stable current control and voltage regulation to ensure safe operation and long life of the battery system.

4. **LED lighting system**: For LED lighting systems that require low voltage and high power, 2SK2895-01_05-VB can provide stable current and voltage output, improve lighting effects and energy utilization.

In general, 2SK2895-01_05-VB is an N-channel MOSFET suitable for low voltage and high power applications. It has high performance and stability and can meet the needs of various high-power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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