Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO3P |
Single-N |
650V |
30V（±V） |
3.23V |
20A |
|
|
161(mΩ) |
SJ_Multi-EPI |
Detailed parameter description
- **Drain-Source Voltage (V_DS):** 650V
- The maximum voltage that can be sustained between the drain and source.
- **Gate-Source Voltage (V_GS):** ±30V
- The maximum voltage that can be applied between the gate and source.
- **Threshold Voltage (V_th):** 3.23V
- The minimum gate-source voltage required to turn on the MOSFET.
- **On-Resistance (R_DS(on)):** 161mΩ @ V_GS = 10V
- The resistance between the drain and source when the MOSFET is in the "on" state, measured when the gate-source voltage is 10V.
- **Continuous Drain Current (I_D):** 20A
- The maximum continuous current that can flow through the drain terminal when the device is properly cooled.
- **Package Type:** TO3P
- The physical package of the MOSFET, providing excellent heat dissipation and mechanical strength.
- **Configuration:** Unipolar N-channel
- Indicates that the MOSFET has a single N-channel for conducting electricity.
- **Technology:** SJ_Multi-EPI
- Indicates that the MOSFET is manufactured using SJ_Multi-EPI technology, providing high voltage handling capabilities and good switching performance.
Domain and module applications：
Application Examples
**1. High Voltage Power Converter: **
- The VBPB165R20S MOSFET can be used in high voltage DC-DC converters and switch mode power supplies (SMPS). Its 650V drain-source voltage makes it suitable for high voltage power conversion and regulation, ensuring stable and efficient power output.
**2. Inverter: **
- In inverter applications, such as solar inverters and wind power inverters, the VBPB165R20S MOSFET is able to handle high voltages and perform efficient energy conversion. Its high voltage and high current capabilities make it a key component in inverter design.
**3. Power Electronic Modules: **
- This MOSFET is suitable for a variety of power electronic modules, including power factor correction (PFC) circuits and power protection circuits. Its high voltage handling capability and low on-resistance ensure efficient performance and reliability of power electronic systems.
**4. Motor Drive:**
- In motor drive systems, especially where high voltage is required, the VBPB165R20S can be used to control the switching of the motor, ensuring high efficiency and reliable current handling.
**5. High-voltage Switching Applications:**
- This MOSFET can be used in high-voltage switching applications, such as switching and protecting circuits of high-voltage loads. Its high voltage and current handling capabilities are suitable for high-power switching operations, ensuring safe and stable operation of the system.
By applying the VBPB165R20S MOSFET to these areas, designers can achieve efficient and reliable performance to meet the requirements of high voltage and high current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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