Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-P |
-30V |
20V（±V） |
-1.8V |
-40A |
|
24(mΩ) |
18(mΩ) |
Trench |
Detailed parameter description
- **Drain-Source Voltage (V_DS):** -30V
- The maximum negative voltage that can be applied between the drain and source.
- **Gate-Source Voltage (V_GS):** ±20V
- The maximum voltage that can be applied between the gate and source.
- **Threshold Voltage (V_th):** -1.8V
- The minimum gate-source voltage required to turn on the MOSFET.
- **On-Resistance (R_DS(on)):** 24mΩ @ V_GS = 4.5V
- The resistance between the drain and source when the MOSFET is in the "on" state, measured when the gate-source voltage is 4.5V.
- **On-resistance (R_DS(on)):** 18mΩ @ V_GS = 10V
- The resistance between the drain and source when the MOSFET is in the “on” state, measured when the gate-source voltage is 10V.
- **Continuous drain current (I_D):** -40A
- The maximum continuous negative current that can flow through the drain terminal when the device is properly heatsinked.
- **Package type:** TO251
- The physical package of the MOSFET, which provides good heat dissipation and structural stability.
- **Configuration:** Unipolar P-channel
- Indicates that the MOSFET has a single P-channel for conducting electricity.
- **Trench technology:**
- Indicates that the MOSFET is manufactured using Trench technology, providing excellent switching performance and low conduction losses.
Domain and module applications：
Application Examples
**1. Power Management Systems:**
- The VBF2317 MOSFET can be used for high current switching in power management systems, especially for applications that need to handle negative voltages. Its low on-resistance ensures high efficiency and low power losses, making it suitable for use in power distribution and protection circuits.
**2. Motor Drives:**
- In motor drive applications, the VBF2317 can be used to control the negative current path of the motor, making it suitable for high power drive systems such as power tools and electric vehicles. Its high current handling capability and low on-resistance make it an excellent performer in these applications.
**3. Inverters:**
- In inverter applications, especially for solar and wind inverters, the VBF2317 can be used as a switching element to handle negative voltages and ensure efficient energy conversion and power conditioning.
**4. Load Switches:**
- This MOSFET is suitable for load switching applications, such as controlling the switching of high current loads in load protection circuits. Its low R_DS(on) ensures efficient performance and reliability under high load conditions.
**5. Battery Management System:**
- In battery management systems, VBF2317 can be used to control the charging and discharging paths of the battery, especially when handling negative voltages. Its high current and low on-resistance characteristics ensure stability and efficiency of the battery management system.
By applying the VBF2317 MOSFET to these areas, designers can achieve efficient and reliable performance to meet the requirements of high current and negative voltage handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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