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VBE2670 Product details
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Product Introduction
**Model:** VBE2670
**Package:** TO252
**Configuration:** Single-P
**Maximum Drain Voltage (VDS):** -60V
**Maximum Gate Voltage (VGS):** ±20V
**Threshold Voltage (Vth):** -1.92V
**On-resistance (RDS(on)):** 70mΩ @ VGS=10V
**Maximum Drain Current (ID):** -25A
**Technology:** Trench
**Model:** VBE2670
**Package:** TO252
**Configuration:** Single-P
**Maximum Drain Voltage (VDS):** -60V
**Maximum Gate Voltage (VGS):** ±20V
**Threshold Voltage (Vth):** -1.92V
**On-resistance (RDS(on)):** 70mΩ @ VGS=10V
**Maximum Drain Current (ID):** -25A
**Technology:** Trench
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | 20V（±V） | -1.92V | -25A | 70(mΩ) | Trench |
Detailed parameter description
1. **Electrical characteristics:**
- **Drain-source voltage (VDS):** -60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.92V (typical)
- **On-resistance (RDS(on)):** 70mΩ @ VGS=10V
- **Drain current (ID):** -25A (continuous)
2. **Thermal characteristics:**
- **Junction-to-case thermal resistance (RθJC):** To be determined
- **Maximum junction temperature (TJ):** To be determined
3. **Dynamic characteristics:**
- **Input capacitance (Ciss):** To be determined
- **Output capacitance (Coss):** To be determined
- **Reverse transfer capacitance (Crss):** To be determined
- **Switching time (ton and toff):** To be determined
4. **Package characteristics:**
- **Package type:** TO252
- **Number of pins:** 3
1. **Electrical characteristics:**
- **Drain-source voltage (VDS):** -60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.92V (typical)
- **On-resistance (RDS(on)):** 70mΩ @ VGS=10V
- **Drain current (ID):** -25A (continuous)
2. **Thermal characteristics:**
- **Junction-to-case thermal resistance (RθJC):** To be determined
- **Maximum junction temperature (TJ):** To be determined
3. **Dynamic characteristics:**
- **Input capacitance (Ciss):** To be determined
- **Output capacitance (Coss):** To be determined
- **Reverse transfer capacitance (Crss):** To be determined
- **Switching time (ton and toff):** To be determined
4. **Package characteristics:**
- **Package type:** TO252
- **Number of pins:** 3
Domain and module applications：
Application fields and modules
1. **Power management:**
- **Application:** Reverse current protection circuit, DC-DC converter
- **Description:** The P-type structure of VBE2670 is suitable for circuits that require reverse current protection, such as the reverse protection function in power management. Its high withstand voltage and moderate on-resistance enable it to provide stable performance in DC-DC converters.
2. **Automotive electronics:**
- **Application:** Automotive power protection module, vehicle inverter
- **Description:** In the field of automotive electronics, VBE2670 can be used in vehicle power protection modules and inverters to prevent damage caused by reverse power connection and ensure the stability and reliability of the electrical system.
3. **Industrial Automation:**
- **Applications:** Inverter drive circuit, motor protection
- **Description:** VBE2670 can be used as reverse protection or motor protection for inverters in industrial automation systems, providing the necessary reverse current protection function and ensuring the normal operation of the equipment.
4. **Consumer Electronics:**
- **Applications:** Battery protection circuit, power converter
- **Description:** This MOSFET can be used in battery protection circuits to prevent damage caused by over-discharge or reverse connection of the battery, and is also suitable for protection functions in power converters.
5. **Renewable Energy:**
- **Applications:** Solar inverter, wind energy system
- **Description:** The P-type characteristics of VBE2670 make it suitable for reverse current protection in renewable energy systems, such as solar inverters and wind energy systems, ensuring the stability and safety of the system.
1. **Power management:**
- **Application:** Reverse current protection circuit, DC-DC converter
- **Description:** The P-type structure of VBE2670 is suitable for circuits that require reverse current protection, such as the reverse protection function in power management. Its high withstand voltage and moderate on-resistance enable it to provide stable performance in DC-DC converters.
2. **Automotive electronics:**
- **Application:** Automotive power protection module, vehicle inverter
- **Description:** In the field of automotive electronics, VBE2670 can be used in vehicle power protection modules and inverters to prevent damage caused by reverse power connection and ensure the stability and reliability of the electrical system.
3. **Industrial Automation:**
- **Applications:** Inverter drive circuit, motor protection
- **Description:** VBE2670 can be used as reverse protection or motor protection for inverters in industrial automation systems, providing the necessary reverse current protection function and ensuring the normal operation of the equipment.
4. **Consumer Electronics:**
- **Applications:** Battery protection circuit, power converter
- **Description:** This MOSFET can be used in battery protection circuits to prevent damage caused by over-discharge or reverse connection of the battery, and is also suitable for protection functions in power converters.
5. **Renewable Energy:**
- **Applications:** Solar inverter, wind energy system
- **Description:** The P-type characteristics of VBE2670 make it suitable for reverse current protection in renewable energy systems, such as solar inverters and wind energy systems, ensuring the stability and safety of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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