Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
200V |
20V（±V） |
3.35V |
35A |
|
|
57(mΩ) |
Trench |
Detailed parameter description
- **Drain-Source Voltage (V_DS):** 200V
- The maximum voltage that can be sustained between the drain and source.
- **Gate-Source Voltage (V_GS):** ±20V
- The maximum voltage that can be applied between the gate and source.
- **Threshold Voltage (V_th):** 3.35V
- The minimum gate-source voltage required to turn on the MOSFET.
- **On-Resistance (R_DS(on)):** 57mΩ @ V_GS = 10V
- The resistance between the drain and source when the MOSFET is in the "on" state, measured when the gate-source voltage is 10V.
- **Continuous Drain Current (I_D):** 35A
- The maximum continuous current that can flow through the drain terminal when the device is properly cooled.
- **Package Type:** TO220
- Physical package of MOSFET, providing good heat dissipation and easy installation.
- **Configuration:** Unipolar N-channel
- Indicates that the MOSFET has a single N-channel for conducting electricity.
- **Trench Technology:**
- Indicates that the MOSFET is manufactured using Trench technology, providing excellent switching performance and low conduction losses.
Domain and module applications：
Application Examples
**1. Power Converters: **
- The VBM1206N MOSFET can be used in high voltage DC-DC converters and switch mode power supplies (SMPS). Its high voltage and high current handling capabilities make it suitable as the main switching element in the power conversion process, ensuring efficient energy conversion and stable power output.
**2. Motor Drive: **
- This MOSFET performs well in motor drive applications, especially for high power motor control systems such as industrial motor drives and power tools. Its low R_DS(on) ensures low power loss and high efficiency at high currents.
**3. Battery Management Systems: **
- In battery management systems, the VBM1206N can be used as a switching element for battery charging and discharging control. Its high voltage and high current capabilities ensure the reliability and efficiency of battery management systems.
**4. Inverters:**
- In solar inverters and wind inverters, the high voltage handling capability of the VBM1206N MOSFET makes it suitable for converting and regulating electricity from renewable energy sources, providing stable power output.
**5. Power Electronics Modules:**
- This MOSFET can be used in a variety of power electronic modules, such as power factor correction (PFC) circuits and power protection circuits. Its low on-resistance and high current handling capabilities make it a key component in power electronic design.
By applying the VBM1206N MOSFET to these areas, designers can achieve efficient and reliable performance to meet the high voltage and high current handling requirements of modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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