Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
TO252 |
Single-N |
30V |
20V(±V) |
1.83V |
85A |
|
|
4(mΩ) |
Trench |
Detailed parameter description
1. **Package**: TO-252
- Provides efficient heat dissipation performance and a small footprint, suitable for high-power and high-density circuit design.
2. **Configuration**: Single N-channel
- Simplifies circuit design and improves integration, suitable for switch control in various applications.
3. **V_DS (drain-source voltage)**: 30V
- Suitable for low to medium voltage applications, meeting high-voltage switch requirements.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive to adapt to different control voltage requirements.
5. **V_th (threshold voltage)**: 1.83V
- At this voltage, the MOSFET starts to turn on, ensuring stable operation under low voltage control.
6. **R_DS(ON)**: 4 mΩ @ V_GS = 10V
- Extremely low on-resistance reduces power consumption and improves overall circuit efficiency.
7. **I_D (Continuous Drain Current)**: 85A
- High current handling capability, suitable for applications requiring high current.
8. **Technology**: Trench
- Provides efficient switching performance and low on-resistance, improving overall performance.
Domain and module applications:
Application Examples
**1. Power Management: **
- **Field**: Computer Power Supply
- **Example**: In a high-efficiency switch mode power supply (SMPS), VBE1305 can handle power modules with high current output. Its low on-state resistance and high current carrying capacity make it perform well in power factor correction (PFC) circuits, helping to improve the stability and efficiency of the power supply.
**2. Motor Drive: **
- **Field**: Industrial Automation
- **Example**: Applied to motor drive circuits, VBE1305 can provide efficient switching control and is suitable for motor loads that require large current. Its high current carrying capacity ensures smooth operation of the motor and is suitable for motor control applications in industrial automation.
**3. High-power LED Drive: **
- **Field**: Lighting System
- **Example**: In a high-power LED drive circuit, VBE1305 can efficiently drive LED modules. Due to its low on-resistance, it can reduce power consumption and ensure stable brightness of LEDs, making it suitable for LED lighting systems that require high power output.
**4. Battery Management: **
- **Field**: Electric Vehicles (EV)
- **Example**: In the battery management system of electric vehicles, VBE1305 can effectively handle the charge and discharge control of the battery. Its high current carrying capacity and high efficiency make it an ideal choice for battery management systems, helping to improve the energy efficiency and range of electric vehicles.
**5. Power Protection: **
- **Field**: Communication Equipment
- **Example**: Used in power protection circuits to protect communication equipment from overcurrent and short circuit damage. The high current handling capability and low on-resistance of VBE1305 provide effective protection functions to ensure the stable operation of communication systems.
The VBE1305 MOSFET is a high-efficiency, high-current handling switching device that is widely used in a variety of electronic applications with high power and high efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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