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VBM15R20S Product details
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Product Introduction
**VBM15R20S** is a high voltage N-channel MOSFET in TO220 package. This MOSFET uses SJ_Multi-EPI technology and is designed to handle high voltage applications, with high current carrying capacity and moderate on-resistance. Its high voltage resistance and excellent current handling capability make it suitable for high voltage and high power applications, providing reliable switching performance and high efficiency.
**VBM15R20S** is a high voltage N-channel MOSFET in TO220 package. This MOSFET uses SJ_Multi-EPI technology and is designed to handle high voltage applications, with high current carrying capacity and moderate on-resistance. Its high voltage resistance and excellent current handling capability make it suitable for high voltage and high power applications, providing reliable switching performance and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 500V | 30V（±V） | 3.3V | 20A | 140(mΩ) | SJ_Multi-EPI |
Detailed parameter description
- **Package**: TO220
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate-source threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 140mΩ (at VGS = 10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
- **Package**: TO220
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate-source threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 140mΩ (at VGS = 10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Applications and module examples
The high voltage carrying capability and excellent current handling performance of the **VBM15R20S** enable it to excel in multiple fields and modules, including:
1. **Power management**:
- **High voltage switching power supply**: In high voltage switching power supply design, the VBM15R20S is used as a switching element capable of handling voltages up to 500V. Its high current handling capability and moderate RDS(ON) ensure efficient and stable operation of the power system.
2. **Industrial power supply**:
- **High voltage power supply control**: In industrial power supply systems, this MOSFET is suitable for high voltage power supply control and switching tasks. Its high VDS and low RDS(ON) enable it to effectively manage high voltage and high current loads, improving system efficiency and reliability.
3. **Electric Vehicles**:
- **Battery Management System**: In the battery management system of electric vehicles, the high voltage and high current carrying capacity of VBM15R20S make it suitable for high-voltage battery management and power switching, ensuring the safety and performance of the battery system.
4. **Power Amplifier**:
- **High-Voltage Power Amplifier**: In power amplifier applications, the high VDS characteristics of MOSFET allow it to handle high-voltage signals. Its high current capability and reasonable on-resistance can support high-power applications and provide stable and efficient power amplification.
5. **Inverters and Drives**:
- **High-Voltage Inverters and Drives**: In inverters and drives, VBM15R20S can be used for high-voltage switching and control, handling switching tasks in high-voltage and high-power applications, ensuring system reliability and efficiency.
These application examples demonstrate the high voltage carrying capability and good current handling performance of the VBM15R20S, making it particularly suitable for electronic systems that need to handle high voltage and high power.
The high voltage carrying capability and excellent current handling performance of the **VBM15R20S** enable it to excel in multiple fields and modules, including:
1. **Power management**:
- **High voltage switching power supply**: In high voltage switching power supply design, the VBM15R20S is used as a switching element capable of handling voltages up to 500V. Its high current handling capability and moderate RDS(ON) ensure efficient and stable operation of the power system.
2. **Industrial power supply**:
- **High voltage power supply control**: In industrial power supply systems, this MOSFET is suitable for high voltage power supply control and switching tasks. Its high VDS and low RDS(ON) enable it to effectively manage high voltage and high current loads, improving system efficiency and reliability.
3. **Electric Vehicles**:
- **Battery Management System**: In the battery management system of electric vehicles, the high voltage and high current carrying capacity of VBM15R20S make it suitable for high-voltage battery management and power switching, ensuring the safety and performance of the battery system.
4. **Power Amplifier**:
- **High-Voltage Power Amplifier**: In power amplifier applications, the high VDS characteristics of MOSFET allow it to handle high-voltage signals. Its high current capability and reasonable on-resistance can support high-power applications and provide stable and efficient power amplification.
5. **Inverters and Drives**:
- **High-Voltage Inverters and Drives**: In inverters and drives, VBM15R20S can be used for high-voltage switching and control, handling switching tasks in high-voltage and high-power applications, ensuring system reliability and efficiency.
These application examples demonstrate the high voltage carrying capability and good current handling performance of the VBM15R20S, making it particularly suitable for electronic systems that need to handle high voltage and high power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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