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VBFB16R02S Product details

Product introduction:

VBFB16R02S Product Introduction

The VBFB16R02S is a high voltage single N-channel MOSFET in a TO251 package designed for applications requiring high voltage and low current. The MOSFET has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, with a threshold voltage of 3.3V. It uses SJ_Multi-EPI technology to provide a higher on-resistance, with an on-resistance of 2300mΩ at a VGS of 10V and a maximum drain current (ID) of 2A. The VBFB16R02S is suitable for high voltage switching and protection circuits, and can maintain reliable performance under high voltage conditions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 600V 30V(±V) 3.3V 2A 2300(mΩ) SJ_Multi-EPI
VBFB16R02S Detailed Parameter Description

| Parameter| Value| Unit|
|--------------------|-------------------|------|
| Package Type| TO251 | |
| Configuration| Single N-channel| |
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Threshold Voltage (Vth) | 3.3 | V |
| On-Resistance (RDS(ON)) | 2300 (VGS=10V) | mΩ |
| Maximum Drain Current (ID) | 2 | A |
| Technology| SJ_Multi-EPI | |

Domain and module applications:

VBFB16R02S Application Fields and Modules

1. **High-Voltage Switching**:
VBFB16R02S performs well in high-voltage switching applications, especially for high-voltage switching tasks requiring 600V. Its high drain-source voltage capability and high current handling capability enable it to work stably in power management and high voltage control, ensuring the safety and reliability of the system.

2. **Power Protection**:
In power protection applications, VBFB16R02S can effectively handle high voltage and low current protection tasks. Its high voltage capability and higher on-resistance make it reliable in overvoltage protection and protection circuits, preventing power system damage and ensuring safe operation of equipment.

3. **Inverters**:
In inverter applications, VBFB16R02S can handle high voltage loads and is suitable for switching and controlling high voltage inverter circuits. Its 600V drain-source voltage capability enables it to provide reliable switching performance in inverter circuits, suitable for industrial and household inverter designs.

4. **Power Electronics**:
This MOSFET is suitable for a variety of power electronic devices, such as high voltage converters and power conditioners. Its high voltage handling capability and low current characteristics enable it to provide efficient switching control and stable performance in power electronics applications.

5. **Lighting Systems**:
In high voltage lighting systems, the VBFB16R02S can effectively control high voltage loads and is suitable for LED driving and high voltage lamp control. Its high voltage capability and reliable switching performance ensure efficient operation and long-term stability of the lighting system.

With its high voltage and low current handling capabilities and high on-resistance, the VBFB16R02S is suitable for a variety of high voltage and low current applications, providing a reliable solution for power management, power protection and power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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