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VBGC2101K Product details

Product introduction:

VBGC2101K Product Introduction

VBGC2101K is a high-performance dual P-channel MOSFET in DIP8 package, designed for low current and high voltage applications. The MOSFET has a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V, with a threshold voltage of -3V. It uses advanced Trench technology to provide lower on-resistance, with an on-resistance of 1000mΩ at VGS of 10V and a maximum drain current (ID) of -0.7A. The VBGC2101K is particularly suitable for power management and signal control applications, and can maintain reliable performance and stability under high voltage conditions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DIP8 Dual-P -100V 20V(±V) -3V -0.7A 1000(mΩ) Trench
VBGC2101K Detailed Parameter Description

| Parameter| Value| Unit|
|--------------------|-------------------|------|
| Package Type| DIP8 | |
| Configuration| Dual P-Channel| |
| Drain-Source Voltage (VDS) | -100 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Threshold Voltage (Vth) | -3 | V |
| On-Resistance (RDS(ON)) | 1000 (VGS=10V) | mΩ |
| Maximum Drain Current (ID) | -0.7 | A |
| Technology| Trench | |

Domain and module applications:

VBGC2101K Applicable Fields and Modules

1. **Power Management**:
VBGC2101K performs well in power management applications, especially for high voltage and low current control tasks. Its high drain-source voltage (-100V) and dual P-channel configuration enable it to operate effectively in complex power management circuits, ensuring the stability and reliability of the power system.

2. **Signal Control**:
This MOSFET is suitable for various signal control applications, such as analog switches and level converters. Its low on-resistance and moderate drain current enable it to effectively control signal transmission under high voltage conditions, and is suitable for use in high-precision and high-stability signal control circuits.

3. **Protection Circuits**:
In protection circuits, VBGC2101K can provide reliable overvoltage and overcurrent protection. Its high voltage and low current characteristics enable it to work effectively in protection circuits, ensuring the safety and reliability of sensitive electronic equipment.

4. **Inverters**:
In inverter applications, the VBGC2101K is able to handle high voltage and low current loads, and is suitable for inverter circuits that require precise control. Its dual P-channel configuration and high voltage characteristics enable it to provide efficient control and stable performance in inverter circuits.

5. **Low-Power Applications**:
The VBGC2101K performs well in low-power applications and is suitable for circuit designs that require high voltage and low current. Its low on-resistance and dual P-channel configuration enable it to provide efficient and stable performance in low-power circuits, and is suitable for use in portable devices and battery-powered electronics.

With its high voltage and low current handling capabilities and low on-resistance, the VBGC2101K is suitable for a variety of applications that require efficient and stable performance, providing a reliable solution for power management, signal control, and protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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