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VBGC2610N Product details

Product introduction:

VBGC2610N Product Introduction

**VBGC2610N** is a single P-channel power MOSFET manufactured using Trench technology and packaged in DIP8. This MOSFET has medium voltage and current capabilities and is suitable for a variety of electronic devices that require efficient switching and amplification functions. Its low on-resistance and excellent electrical performance make it a reliable choice in a variety of application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DIP8 Single-P -60V 20V(±V) -2V -3A 100(mΩ) Trench
Detailed parameter description

- **Package: ** DIP8
- **Configuration: ** Single P-channel
- **Maximum drain-source voltage (VDS): ** -60V
- **Maximum gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -2V
- **On-resistance (RDS(on)): ** 100mΩ @ VGS = 10V
- **Maximum continuous drain current (ID): ** -3A
- **Technology: ** Trench

Domain and module applications:

Application fields and module examples

**VBGC2610N**’s features make it suitable for multiple fields and modules, including:

1. **Power management:**
VBGC2610N is very suitable for power management modules, especially in negative voltage power supply applications. Its P-channel characteristics enable it to efficiently perform power conversion and regulation under negative voltage conditions, ensuring stable operation of the device under various operating conditions.

2. **Switching power supply (SMPS):**
In a switching mode power supply, VBGC2610N can be used as a switching element to help achieve efficient energy conversion. Its low on-resistance and medium current capability (-3A) can effectively reduce switching losses and improve the overall efficiency of the power supply.

3. **Battery management system (BMS):**
In a battery management system, this MOSFET can control the discharge process of the battery to ensure that the battery operates within a safe range. Its high withstand voltage (-60V) and low on-resistance (100mΩ @ VGS = 10V) make it an ideal choice for battery management applications.

4. **Load Switch:**
VBGC2610N is suitable for various load switch applications, such as load control in consumer electronics and industrial equipment. Its P-channel characteristics and excellent switching performance enable it to efficiently control the flow of current, ensuring the reliability and stability of the equipment.

5. **Consumer Electronics:**
In consumer electronics such as smartphones, tablets and portable devices, VBGC2610N can be used for power management and load switching, helping to optimize power distribution and current control, and improve the energy efficiency and service life of the equipment.

In summary, VBGC2610N is a high-performance P-channel MOSFET suitable for multiple fields such as power management, switching power supplies, battery management, load switches and consumer electronics. Its excellent electrical performance and reliability make it an ideal choice in various application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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