Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
DIP8 |
Single-N |
100V |
20V(±V) |
2V |
3A |
|
120(mΩ) |
100(mΩ) |
Trench |
Detailed parameter description
- **Package**: DIP8
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2V
- **On-resistance (RDS(on))**:
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 3A
- **Technology**: Trench technology
Domain and module applications:
Application fields and module examples
The features of **VBGC1101M** make it suitable for multiple medium power and high efficiency application fields, including:
1. **Power management**: Due to its medium on-resistance and current capability, this MOSFET is suitable for medium power power management systems, such as linear power supplies and low power DC-DC converters. It can handle moderate current switching requirements, providing stable power conversion and energy efficiency.
2. **Industrial automation**: In industrial automation equipment, such as controllers and drivers, this MOSFET can handle medium voltage and current switching operations, ensuring system reliability and stability, and is suitable for the control and drive of medium power loads.
3. **Consumer electronics**: In consumer electronics products, such as home appliances and audio equipment, this MOSFET can be used in power management and switching circuits, providing stable current control and efficient power conversion.
4. **Test and measurement equipment**: In test and measurement equipment, this MOSFET is suitable for power switching and signal control, providing reliable current switching performance and efficient power control, ensuring the accuracy and stability of the measurement equipment.
5. **Automotive electronics**: In automotive electronic systems, such as low-power motor drives and battery management modules, this MOSFET can handle medium current and voltage switching operations, provide efficient power management and reliable current control, and ensure the efficiency and reliability of automotive electronic systems.
In summary, the VBGC1101M is a MOSFET with medium current carrying capacity and high on-resistance, suitable for a variety of medium-power power management and switching applications, especially in systems that require high voltage handling capabilities and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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