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VBBD7322 Product details
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1. VBBD7322 Product Introduction
VBBD7322 is a high-performance single N-channel MOSFET in a compact DFN8(3x2)-B package. This MOSFET is designed for efficient switching applications and has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. VBBD7322 uses advanced Trench technology with a threshold voltage (Vth) of 1.5V. At a gate-source voltage of 4.5V, its on-resistance is 19mΩ, while at a gate-source voltage of 10V, the on-resistance is reduced to 16mΩ. This MOSFET supports a continuous drain current (ID) of up to 9A, which is very suitable for applications requiring efficient switching and low conduction losses.
VBBD7322 is a high-performance single N-channel MOSFET in a compact DFN8(3x2)-B package. This MOSFET is designed for efficient switching applications and has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. VBBD7322 uses advanced Trench technology with a threshold voltage (Vth) of 1.5V. At a gate-source voltage of 4.5V, its on-resistance is 19mΩ, while at a gate-source voltage of 10V, the on-resistance is reduced to 16mΩ. This MOSFET supports a continuous drain current (ID) of up to 9A, which is very suitable for applications requiring efficient switching and low conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X2)-B | Single-N | 30V | 20V（±V） | 1.5V | 9A | 19(mΩ) | 16(mΩ) | Trench |
II. VBBD7322 Detailed Parameters
| Parameter | Value | Unit |
|------------------------|--------------------------|--------|
| Product Model | VBBD7322 | |
| Package | DFN8(3x2)-B | |
| Configuration | Single N-channel | |
| Drain-Source Voltage (VDS) | 30 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Threshold Voltage (Vth) | 1.5 | V |
| On-Resistance (RDS(ON)) | 19 (VGS = 4.5V) | mΩ |
| | 16 (VGS = 10V) | mΩ |
| Continuous Drain Current (ID) | 9 | A |
| Instantaneous Pulse Drain Current (ID(pulse)) | 36 | A |
| Maximum power consumption (Ptot) | 2.5 | W |
| Operating temperature range | -55 to +150 | °C |
| Storage temperature range | -55 to +150 | °C |
| Technology | Trench | |
| Parameter | Value | Unit |
|------------------------|--------------------------|--------|
| Product Model | VBBD7322 | |
| Package | DFN8(3x2)-B | |
| Configuration | Single N-channel | |
| Drain-Source Voltage (VDS) | 30 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Threshold Voltage (Vth) | 1.5 | V |
| On-Resistance (RDS(ON)) | 19 (VGS = 4.5V) | mΩ |
| | 16 (VGS = 10V) | mΩ |
| Continuous Drain Current (ID) | 9 | A |
| Instantaneous Pulse Drain Current (ID(pulse)) | 36 | A |
| Maximum power consumption (Ptot) | 2.5 | W |
| Operating temperature range | -55 to +150 | °C |
| Storage temperature range | -55 to +150 | °C |
| Technology | Trench | |
Domain and module applications：
III. Applications and Module Examples
The design of the VBBD7322 enables it to excel in multiple fields and applications, especially in applications that require efficient switching and low on-resistance. Here are a few specific application examples:
1. **Power Management**: In low-voltage switching power supplies and DC-DC converters, the VBBD7322 can be used as an efficient switching element. Its low on-resistance and moderate current handling capability make it ideal for improving power conversion efficiency and reducing power losses.
2. **Portable Devices**: Due to its compact DFN8(3x2)-B package, the VBBD7322 is ideal for switching applications in portable electronic devices. For example, power management modules in smartphones, tablets, and portable chargers can take advantage of the high efficiency and small size of this MOSFET.
3. **Battery Management System**: In a battery management system (BMS), the VBBD7322 can provide battery switching and protection functions. Its low on-resistance and high switching efficiency help improve the overall performance and life of the battery system, especially in battery management for mobile devices and electric vehicles.
4. **Communication Equipment**: In wireless communication equipment and base station power management, VBBD7322 can provide efficient switching functions to ensure stable operation and high efficiency of the equipment. Its low on-resistance and efficient switching characteristics help reduce power consumption and improve system reliability and stability.
These application examples demonstrate the key role of VBBD7322 in scenarios that require efficient switching and low conduction losses, especially in portable electronic devices and low-power motor drive systems.
The design of the VBBD7322 enables it to excel in multiple fields and applications, especially in applications that require efficient switching and low on-resistance. Here are a few specific application examples:
1. **Power Management**: In low-voltage switching power supplies and DC-DC converters, the VBBD7322 can be used as an efficient switching element. Its low on-resistance and moderate current handling capability make it ideal for improving power conversion efficiency and reducing power losses.
2. **Portable Devices**: Due to its compact DFN8(3x2)-B package, the VBBD7322 is ideal for switching applications in portable electronic devices. For example, power management modules in smartphones, tablets, and portable chargers can take advantage of the high efficiency and small size of this MOSFET.
3. **Battery Management System**: In a battery management system (BMS), the VBBD7322 can provide battery switching and protection functions. Its low on-resistance and high switching efficiency help improve the overall performance and life of the battery system, especially in battery management for mobile devices and electric vehicles.
4. **Communication Equipment**: In wireless communication equipment and base station power management, VBBD7322 can provide efficient switching functions to ensure stable operation and high efficiency of the equipment. Its low on-resistance and efficient switching characteristics help reduce power consumption and improve system reliability and stability.
These application examples demonstrate the key role of VBBD7322 in scenarios that require efficient switching and low conduction losses, especially in portable electronic devices and low-power motor drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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